IRF7233TR ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91849DIRF7233®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -12V2 7D ..
IRF7233TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
IRF7240 ,-40V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7240TRPBF ,-40V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7241 ,-40V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain- Source Voltage -40 VDSI @ T = 25° ..
IRF7241 ,-40V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94087IRF7241®HEXFET Power MOSFET● Trench Technology V R max (mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) D● U ..
ISC5804AT2 , Transistor
ISD1020AP , Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
ISD1110P , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1110S , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1210S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
ISD1212S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
IRF7233-IRF7233TR
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 91849D
IRF7233
HEXFET© Power MOSFET
International
TOR Rectifier
0 Ultra Low On-Resistance
o P-Channel MOSFET s D11 In, D
. Surface Mount s E2 H 7 D VDSS = -12V
0 Available in Tape & Reel 3 tf SE
S DI D
G D14 5333 D RDS(on) = 0.0209
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized fiititis
leadframe for enhanced thermal characteristics and J1} , _
multiple-die capability making it ideal in a variety of power _sjie''''"
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques,
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -4.5N/ 19.5
ID @ TA-- 70°C Continuous Drain Current, l/cs @ -4.5V 16.0 A
IDM Pulsed Drain Current OD t76
Pro @TA = 25°C Power Dissipation 2.5 W
Pro @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 60 mJ
Vss Gate-to-Source Voltage 1: 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient© 50 °C/W
1
IRF7233
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 - - V VGS = 0V, lo = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.001 - V/°C Reference to 25°C, ID = -1mA
Rrosom Static Drain-to-Source On-Resistance - 0.013 0.020 VGS = -4.5V, ID = -9.5A ©
- 0.023 0.033 VGs = -2.5V, lo = -6.0A ©
Vegan) Gate Threshold Voltage -0.6 - - V Vros = Vss, ID = -250pA
gfs Forward Transconductance 3.3 - - S Ws = -10V, ID = -9.5A
- - -10 I/rss = -12V, VGS = 0V
loss Drain-to-Source Leakage Current - - -1.0 pA Ws = -9.6V, VGs = 0V
- - -100 Vos = -12V, VGS = 0V, To = 70''C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 l/ss = 12V
09 Total Gate Charge - 49 74 ID = -9.5A
Qgs Gate-to-Source Charge - 9.3 14 nC Vros = -10V
di Gate-to-Drain ("Miller") Charge - 22 32 VGS = -5.0V©
tam) Turn-On Delay Time - 26 - VDD = -10V
tr Rise Time - 540 - ID = -9.5A
td(off) Turn-Off Delay Time - 77 - ns RD = 1.09
tr Fall Time - 370 - Rs = 6.29 (D
Ciss InputCapacitance - 4530 6000 I/ss-- 0V
Coss Output Capacitance - 2400 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 2220 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -76 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, Vss = 0V ©
tn Reverse Recovery Time - 43 65 ns To = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge - 35 52 nC di/dt = 100A/ps ©
Notes:
© Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle f 2%.
Rs = 259, IAS = 9.5A.
© When mounted on 1 inch square copper board, t<10 sec
© Starting To = 25°C, L = 1.3mH
