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IRF7220PBF
HEXFET Power MOSFET
International
TOR Rectifier
HEXFETID Power MOSFET
PD - 95172
IRF7220PbF
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
VDSS = -14V
RDS(0n) = 0.0129
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -14 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -4.5V tll
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V 18.8 A
IDM Pulsed Drain Current OD t88
Pro @TA = 25°C Power Dissipation 2.5 W
Po @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 110 mJ
VGS Gate-to-Source Voltage 1 12 V
Tu, Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient]) 50 °C/W
10/6/04
IRF7220PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 --.- --.- V l/ss = 0V, ID = -5mA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.006 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - .0082 0.012 Q Vss = M.5V, ID = -1 IA ©
- .0125 O.020 Vas = -2.5V, ID = -8.8A co
VGS(1h) Gate Threshold Voltage -0.60 - - V VDS = Vas, ID = -250pA
gfs Forward Transconductance 8.4 - - S VDS = -10V, ID = -11A
loss Drain-to-Source Leakage Current - - -5.0 pA Vos = -11.2V, Vss = 0V cr
- - -100 VDS = -11.2V, Vias = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage -.- - -100 n A l/ss = -12V
Gate-to-Source Reverse Leakage - - 100 l/ss = 12V
q, Total Gate Charge - 84 125 ID = -11A
Qgs Gate-to-Source Charge - 13 20 nC VDs = -10V
di Gate-to-Drain ("Miller") Charge - 37 55 l/es = -5.0V ©
td(on) Turn-On Delay Time - 19 - VDD = -10V
t, Rise Time - 420 - ns ID = -11A
taott) Turn-Off Delay Time - 140 - Rs = 6.29
tf Fall Time - 1040 - RD = 0.919 ©
Ciss Input Capacitance - 8075 - Veg = 0V
Cass Output Capacitance - 4400 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 4150 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol .
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -88 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V TJ = 25°C, IS = -2.5A, Vas = 0V ©
trr Reverse Recovery Time - 160 240 ns TJ = 25°C, I; = -2.5A
Q,, Reverse RecoveryCharge - 147 220 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
(3 When mounted on 1 inch square copper board, t<10 sec
© Starting TJ = 25°C, L = 1.8mH
© Pulse width 5 300ps; duty cycle 5 2%.
Re = 259, IAS-- 11A. (See Figure 10)
