IRF7210 ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91844AIRF7210®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -12V2 7D ..
IRF7210TR ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91844AIRF7210®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -12V2 7D ..
IRF7220 ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91850CIRF7220®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -14V2 7D ..
IRF7220PBF ,HEXFET Power MOSFETapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
IRF7220TR ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
IRF7220TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package IRF7220PbFHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETV = -14V ..
ISC-1812 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSL & Q FREQ. MIN. CURRENTIND. Q MAX.Inductance Range: 0.10µH to 1000µH.TOL ..
ISC5804AT2 , Transistor
ISD1020AP , Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
ISD1110P , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1110S , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1210S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
IRF7210-IRF7210TR
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 91844A
International
TOR Rectifier |RF7210
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
. P-Channel MOSFET S my (In, D
0 Surface Mount s m2 - 7 D VDSS = -12V
0 Available in Tape & Reel 3 :3: SE
S CED J_LJ D
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized “5%.;3.
leadframe for enhanced thermal characteristics and vCti''s','P"''
multiple-die capability making it ideal in a variety of power
applications. Nth these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infra red, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
lo @ TA = 25°C Continuous Drain Current, VGS @ -4.5V 116
ID @ TA= 70°C Continuous Drain Current, VGs @ -4.5V t12 A
IDM Pulsed Drain Current C) 1100
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
N/ss Gate-to-Source Voltage , 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 16 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 50 °C/W
1
7/30/99
IRF7210 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 - - V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGs = 0V, lo = -250pA
Avangs/ATJ Breakdown Voltage Temp. Coemcient - 0.011 - V/°C Reference to 25''C, ID = -1mA
Rom”) Static Drain-to-Source On-Resistance - .005 .007 Q VGS = -4.5V, ID = -16A ©
- .007 .010 VGS = -2.5V, ID = -12A ©
VGSM Gate Threshold Voltage -0.6 - - V Vos = Kas, ID = -500pA
9ts Forward Transconductance 16 - - S Vos = -10V, ID = -16A
- - -10 Vros = -12V, VGS = 0V
bss Drain-to-Source Leakage Current - - -1.0 pA Vos = -9.6V, VGs = 0V
- - -100 Vos = -12V, VGs = 0V, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 212 318 ID = -10A
Q95 Gate-to-Source Charge - 27 41 nC Ws = -10V
di Gate-to-Drain ("Miller") Charge - 52 78 V35 = -5.0V®
tdon) Turn-On Delay Time - 50 - ns VDD = -10V
tr Rise Time - 3.0 - ID = -10A
town) Turn-Off Delay Time - 6.5 - us RD = 1.09
k Fall Time - 30 - Rs = 6.29 (D
Ciss Input Capacitance - 17179 - VGS = 0V
Coss Output Capacitance - 9455 - pF Vros = -10V
Crss Reverse Transfer Capacitance - 8986 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -100 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, ls = -2.5A, N/ss = 0V ©
tn Reverse Recovery Time - 165 247 ns To = 25°C, IF = -2.5A
G, Reverse RecoveryCharge - 296 444 nC di/dt = 85A/ps ©
Notes:
© Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
© Pulse width f 300ps; duty cycle s: 2%.
2
