IRF720S ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageHEXFET® Power MOSFET
. Surface Mount
. Available in Tape lk Reel D
. Dynamic dv/dt Rating
I ..
IRF720SPBF ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageHEXFET® Power MOSFET
. Surface Mount
. Available in Tape lk Reel D
. Dynamic dv/dt Rating
I ..
IRF7210 ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91844AIRF7210®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -12V2 7D ..
IRF7210TR ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91844AIRF7210®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -12V2 7D ..
IRF7220 ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 91850CIRF7220®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -14V2 7D ..
IRF7220PBF ,HEXFET Power MOSFETapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
ISC-1812 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSL & Q FREQ. MIN. CURRENTIND. Q MAX.Inductance Range: 0.10µH to 1000µH.TOL ..
ISC5804AT2 , Transistor
ISD1020AP , Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
ISD1110P , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1110S , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1210S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
IRF720S-IRF720SPBF
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
hita'nati'ttngl PD-9.1008
Salt Rectifier IFlF720S
HEXFETO Power MOSFET
0 Surface Mount
o Available in Tape 8: Reel D -
tt Dynamic dv/dt Rating Voss - 400V
0 Repetitive Avalanche Rated
o FastSwitching G C, fl Riosion) = 1.852
0 Ease of Paralleling
o Simple Drive Requirements s ID L''''': 3. 3A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEXM. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up 102.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
" Parame1er -" Max. Units
7 lo Q Tc = 25°C Continuous Drain Current, Vas It 10 v 3.3 __-__-
@193 190°C Continuous Drain Current, Vas gt 10 V 2.1 A
IDM Pulsed Drain Current fl, - - 13 -
egg To = 25°C Power Dissipation ”jg” - -.-.-.-.- - w
er tt TA = 25°C Power Dissipatioq (PCB Mount)" 3.1 - -
Linear Derating Factor - "__ 0.40 W PC
V T.. - I-irysar Derating Factor (PCB Mount " 0.025 --------"
L31”; Gate-to-Source Voltage " --i- -.- 120 V
EAS Single Pulse AvalaIti1i.frlttrgy il) 190 PH -
JAE - Avalanche Current (i) n - 3.3 - - A
E») Repitriy Avalanche Energy (i) 5.0 - _--- PJ-....,
_dv/tit Peak Diode Recovery dv/dt © --q - 4.0 _ V/ns
Ts Tsm Junction and Storage Temperature Range V -55 to +150 . --mirr--rrt--.9 °C
-8okiedng Temperature, 19_y_1_97§gc:ionds _ 300 (1.6mm from case)
Thermal Resistance
Parameter " _h8lrl., Typ. Max. Units
Heuc JyrTtipp-to-Case - -.,-,,. r----- __23- -
LENA - Junction-to-Ambient (PCB mount)" . _t, - - 40 ': tNI [
' . I" """'--""--""-"'"'T--"-. 1
1 Ram JurtctiqtrrtttPbient - A - " - 62 ( j
- When mounted on 1" square PCB (FR-4 or 6-10 Material).
For recommended footprint and soldering techniques referto application note #AN-994.
|RF7ZOS AJR
Electrical Characteristics lit TO = 25°C (unless otherwlse specified)
- _ - - Parameter Min. Typ. Max. Units Teitponditions
V(enwss Drain-to-Source Breakdown Voltage 400 c, - - y Var-r-OV, ' 250M
LNimistltifs Breakdown Voltage Temp. Coefiiciln) ,:- 0.51 =3 I/PC Reference to 25''C, In: 1mA
Hnsm) Static Dtain-ttFSoume On-Flesistance - - 1.8 Q Vas=10V, lo=2.0A tg)
Vgsun) Gate 'rrresllold Voltage 2.0 - 4.0 V V08=V§SLIR= 259M
git Forward Transconductance 1.7 - - S Vos=50V, IongA (4)
. - - 25 Vos=400V, Vase-Ol/
loss Drain-to-Source Leakage Current - 'rl" _lit) uA Vos=320V, 'rr3iLijir1f,irGa7sii:'i'''-
16$; Jiate-to-Soum Fontyd Leakage -- L..." 100 nA MVGs=20V =acza==T-=i-.-t ,‘,_
Gate-to-Source Reverse Leakage - _ IT, - -100 Ves=-20V
Jk, Total Gate Charge -—-— TMIN- 20 lo=3.3A
ths Gate-to-Source Charge - _ c, _A/I.., nC v05=320v
099 m - 'ate-to-Drain (''Miller') Charge - - 11 Vas=101l See Fig. 6 and 13 6)
Mon) Tum-On Delay Tirnt_, - - 10 - Vno=200V
tr _ Rise Time - 14 - ns lo=3.3A
tam) Tum-Off Delay Time C"" ED - Re=189
it Fall Time - T" 13 i - Ro=56£2 See Figure _10 © _
Lo Internal Drain Inductance --- 4.5 - Se #18:; tie. i L D "
- I nH from package G 'ir'
Ls Internal Source Inductance -.- , 7.5 - and center 6f 1;
die contact - s
lits, - _ Input Capacitance - 410 - l/as-UN
ths, Output Capacitance - - 120 - PF Vos= 25V
Cm Reverse Transfer tiiyiafiiance - 47 -- f=1.0Mrtfee Figure 5 __
Sourge-Dralm Ratings and Characteristics
W - _ _ - - H 'ev-re-- Parameter Min, Typ, Max. Units Test Conditions -
ls Continuous Source Current - -..- , 3 3 MOSFET symbol i)
P (Body Diode) . -1 A showing the
ISM ' Pulsed Source Curreni - - 13 integral reverse G
___ (Body Diode) C) iiiiiiiii p-n junction diode, s
Vso Diode fonvqrd Voltage - - 1.6 V TJ=25tti, Is=3.3_A, VGs=0V Ca) t
trr Ravens Recovery Time - ' 270 600 ns TJ=25°C, b=3.3A
a, Revers Recovery Charge - 1.4 3.0 __yt3 di/dt=100A/us (i)
_lon Forward Tum-On Time tttryiit turn-on time is neglegible (tum-on is dominated by LseLo)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Ct) VDD=50V, starting TJ=25"C, L=30mH
86:259. |AS==3.3A (See Figure 12)
(3) Isosa.3A. di/dts65A/ps, VootrMim)rrss,
TJS150°C
(4.) Pulse width f 300 us; duty cycle S2%.
