IRF720PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF720PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
PD-9.315J
IfRF720
HEXFET6 Power MOSFET
Dynamic dv/dt ..
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IRF720PBF
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.315J
llRF720 _
llnterrtatiortal
1:212 Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
It Repetitive Avalanche Rated D -
0 Fast Switching Tass - 400V
0 Ease of Paralleling
0 Simple Drive Requirements G LN RDS(on) = 1.89
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The row
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/as @ 10 V 3.3
lo @ To = 100°C Continuous Drain Current, Vss @ 10 V 2.1 A
los, Pulsed Drain Current (D 13
Pa o To = 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 W/°C
Ves Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 190 md
IAR Avalanche Current Cl) 3.3 A
EAR Repetitive Avalanche Energy co 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
Tu Operating Junction and ~55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nona)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-tp-Case - - 2.5 _
Recs Case-to-Sink, Flat, Greased Surface v 0.50 - °C/W
RBJA Junction-to-Ambient - - 62
|RF720
Electrical Characteristics @ To = 25°C (unless otherwise specified)
ll! hit
Parameter Min. Typ, Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 400 - - V Vss=OV, ID: 250p.A
AV(BF\)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.51 - V/°C Reference to 25°C, 10: 1mA
Rps(on) Static Drain-to-Source On-Resistance -... - 1.8 Q VGS=10V, ky--2.0A Cs)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250pA
gfs Forward Transconductance 1.7 - - S Vos=50V, lrr=2.0A Ci)
loss Drain-to-Source Leakage Current - - 25 WA Vos=400V, VGS=OV
- - 250 VDs=320V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
th Total Gate Charge - - 20 Io=3.3A
Qgs Gate-to-Source Charge - - 3.3 no VDs=320V
di Gate-to-Drain ("Miller") Charge - - 11 Ves=10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 10 -. Voo=200V
tr Rise Time - 14 - ns 10:3.3A
tam) Tum-Off Delay Time - 30 .- Re=18§2
tf Fall Time - 13 - Rn=56£2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - S (mfg; Jie. ') D
nH from package iii-ii)
Ls Internal Source Inductance -.r.r-.. 7.5 - and center 6f Ft
die contact s
Ciss Input Capacitance - 410 - VGS=0V
Coss Output Capacitance - 120 - pF Vos=25V
Crss Reverse Transfer Capacitance - 47 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
Is Continuous Source Current __ - 3 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 13 integral r_ever§e G
(Body Diode) CO p-n junction diode. s
Vso Diode Forward Voltage .-.- - 1.6 V TJ=25°C, ls=3.3A, VGs=0V (ii)
trr Reverse Recovery Time - 270 600 ns TJ=25°C, |F=3.3A
er Reverse Recovery Charge - 1.4 3.0 no di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes;
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 1 1)
© VDD=50V, starting TJ=25°C, L=30mH
RG=25§2, lAs=3.3A (See Figure 12)
TJS150°C
© lsoSS.3A, di/de65A/ps, VDDSV(BR)Dss,
co Pulse width s 300 ps; duty cycle 32%.
