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IRF7201-IRF7201PBF-IRF7201TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 91100D
International
Tart, Rectifier IRF7201
HEXFET© Power MOSFET
o Generation V Technology
o Ultra Low On-Resistance D
. N-Channel MOSFET 7m D VDss = 30V
0 Surface Mount 6
0 Available in Tape & Reel m D
o Dynamic dv/dt Rating 5:1]: D RDS(0n) = 0.030Q
. Fast Switching
Description Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designerwith an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modihed through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. 1/Whthese improvements, multiple
devices can be used in an application with dramatically SO-8
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
l/DS Drain- Source Voltage 30 V
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 7.3
ID @ Tc = 70''C Continuous Drain Current, VGs @ 10V 5.8 A
G, Pulsed Drain Current (D 58
Pro @Tc = 25°C Power Dissipation 2.5 W
PD @Tc = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage l 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 70 ml
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient© - 50 ''C/W
1
08/15/03
IRF7201
International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coemcient - 0.024 - V/°C Reference to 25°C, ID = 1mA
Rosa” Static Drain-to-Source On-Resistance - - 0.030 g VGS = 10V, ID = 7.3A ©
- - 0.050 VGS = 4.5V, ID = 3.7A co
VGS(th) Gate Threshold Voltage 1.0 - - V Vros = VGs, ID = 250PA
gts Forward Transconductance 5.8 - - S VDs = 15V, ID = 2.3A
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, N/ss = 0V Q
- - 25 Vos = 24V, VGS = 0V, To = 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 19 28 ID = 4.6A
Qgs Gate-to-Source Charge - 2.3 3.5 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 6.3 9.5 VGS = 10V, See Fig. 10 (D
tum) Turn-On Delay Time - 7.0 - VDD = 15V
tr Rise Time - 35 - ns ID = 4.6A
tdott) Turn-Off Delay Time - 21 - R3 = 6.29
" Fall Time - 19 - RD = 3.29, ©
Ciss Input Capacitance - 550 -.-. VGS = 0V
Coss Output Capacitance - 260 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 58 p-n junction diode. s
va, Diode Forward Voltage - - 1.2 V T: = 25°C, Is = 4.6A, VGS = 0V G)
In Reverse Recovery Time - 48 73 ns T: = 25''C, IF = 4.6A
Qrr Reverse RecoveryCharge - 73 110 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© VDD = 15V, starting Tu = 25°C, L = 6.6mH
Rs = 259, lAs = 4.6A. (See Figure 8)
To I 150°C
© Pulse width 3 300ps; duty cycle I 2%.
s When mounted on 1 inch square copper board, t<10 sec
(3 ISD s 4.6A, di/dt s 120A/ps, VDD : V(BR)DSS,
