IRF720 ,3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 3.3A, 400VThis N-Channel enhancement mode silicon gate power field = 1.800Ω•rDS(ON) ..
IRF7201 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7201PBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package®HEXFET Power MOSFET Generation V TechnologyAA1 8S D Ultra Low On-ResistanceV = ..
IRF7201TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7201TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7204 ,-20V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedSO-8leadframe for enhanced thermal char ..
IS93C86A-3GRI , 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISC-1210 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSInductance Range: .01µH to 100µH.TEST SELF- RATEDInductance Tolerance: ± ..
ISC1210ER100K , Surface Mount, Molded, Shielded Inductor
ISC-1812 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSL & Q FREQ. MIN. CURRENTIND. Q MAX.Inductance Range: 0.10µH to 1000µH.TOL ..
IRF720
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
IRF720
3.3A, 400V, 1.800 Ohm, N-Channel Power
MOSFETThis N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Features 3.3A, 400V
DS(ON)
= 1.800 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering InformationNOTE: When ordering, use the entire part number.
G
GATE
DRAIN (FLANGE)
SOURCE
