IRF711 ,N-Channel Power MOSFETs/ 2.25A/ 350-400Vapplications,
such as switching power supplies, converters, AC and DC
motor controls, relay and s ..
IRF713 ,N-Channel Power MOSFETs/ 2.25A/ 350-400VElectrical Characteristics (TC= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit ..
IRF720 ,3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 3.3A, 400VThis N-Channel enhancement mode silicon gate power field = 1.800Ω•rDS(ON) ..
IRF7201 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7201PBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package®HEXFET Power MOSFET Generation V TechnologyAA1 8S D Ultra Low On-ResistanceV = ..
IRF7201TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IS93C86A-3GRI , 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISC-1210 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSInductance Range: .01µH to 100µH.TEST SELF- RATEDInductance Tolerance: ± ..
ISC1210ER100K , Surface Mount, Molded, Shielded Inductor
ISC-1812 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSL & Q FREQ. MIN. CURRENTIND. Q MAX.Inductance Range: 0.10µH to 1000µH.TOL ..
IRF711-IRF713
N-Channel Power MOSFETs/ 2.25A/ 350-400V
