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IRF710S
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
llnternational
TOR Rectifier
PD-9.1007
llRF710S
HEXFET® Power MOSFET
0 Surface Mount
0 Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
q Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its tow internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, VGs @ 10 V 2.0
lo @ Tc = 100°C Continuous Drain Current, Ves @ 10 v 1.2 A
IDM Pulsed Drain Current (i) 6.0
PD @ Tc = 25°C Power Dissipation 36 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 0.29 W/°C
Linear Derating Factor (PCB Mount)" 0.025
Ws Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 120 mJ
[AR Avalanche Current C) 2.0 A
EAR Repetitive Avalanche Energy C) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt S 4.0 l V/ns
Tu, TSTG Junction and Storage Temperature Range -55to +150 , °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-tty-tDag - - 3.5
RNA Junction-to-Ambient (PCB mount)" - - 40 °C/W
Rm Junction-to-Ambient - - 62
“ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IIRF71OS
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V Vss=OV, Io: 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.47 -r..q.- V/°C Reference to 25°C, In: 1mA
Rosion) Static Drain-to-Source On-Resistance - - 3.6 n Vss=10V, |D=1.2A G)
I/asm Gate Threshold Voltage 2.0 - 4.0 V Vos--Vas, ID: 250pA
gis Forward Transconductance 1.0 - - S Vos=50V, |D=1.2A ©
loss Drain-to-Source Leakage Current - H 25 pA VDS=400V’ I/ss-HN
- - 250 Vos=320V, Ves=0V, TJ=125°C
Gate-to-Source Forward Leakage - - 100 Vss---20V
lass nA
Gate-to-Source Reverse Leakage - - -100 Vesz-ZOV
Qg Total Gate Charge - - 17 ID=2.0A
ths Gate-to-Source Charge - - 3.4 nC Vos=320V
di Gate-to-Drain ("Miller") Charge - -..- 8.5 Ves=10V See Fig. 6 and 13 Cs)
tum) Turn-On Delay Time - 8.0 - VDD=200V
t, Rise Time - 9.9 - ns ID=2.0A
tam) Turn-Off Delay Time - 21 - RG=24Q
11 Fall Time - 11 - RD=959 See Figure 10 co
Lo Internal Drain Inductance - 4.5 ..-.. i'htg,Tn.li/1) to
nH from package (Q: )
Ls Internal Source Inductance - 7.5 - and center Of
die contact tr
Ciss Input Capacitance - 170 - Ves=0V
Coss Output Capacitance - 34 - pF V V05: 25V
Crss Reverse Transfer Capacitance - 6.3 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 2 0 MOSFET symbol D
(Body Diode) . A showing the 1:
ISM Pulsed Source Current - - 6.0 integral reverge G CL
(Body Diode) (i) p-n junction diode. S
Vso Diode Forward Voltage - - 1.6 V TJ=25°C. Is=2.0A, Ves=0V @
tn Reverse Recovery Time - 240 540 ns TJ=25°C, lp=2.0A
er Reverse Recovery Charge - 0.85 1.6 PC di/dt=1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C. L=52mH
RG=25n, IAs=2.0A (See Figure 12)
TJS150°C
© Isosz.0A, di/de40A/prs, Voosvmmoss.
(4) Pulse width 3 300 us; duty cycle 52%.
