IRF7103QTRPBF ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package IRF7103QPbF®HEXFET Power MOSFETBenefitsV R max (m I
IRF7103QPBF-IRF7103QTRPBF
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD-96101C
IRF7103QPbF
HEXFET® Power MOSFET
International
TOR Rectifier
Benefits
q Advanced Process Technology Voss RDS(on) max (m9) In
q Dual N-Channel MOSFET 50V 130©Vss = 10V 3.0A
q Ultra Low On-_Resnstance 200@Ves = 4.5V 1.5A
. 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
. Lead-Free Sl mcl- l a :1: D1
Description GI L2 7JJ_I DI
This HEXFET® Power MOSFET's in a Dual SO-8 package a 6
utilizethelastestprocessingtechniquesto achieve extremely S2 If , , LIE] D2
low on-resistance per silicon area. Additional features of G2 11:4 m 5:1]: D2
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved Top View SO-8
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss © 4.5V 3.0
ID @ TA = 70°C Continuous Drain Current, l/ss @ 4.5V 2.5 A
|DM Pulsed Drain Current (D 25
PD @TA = 25°C Power Dissipation © 2.4 W
Linear Derating Factor 16 W/°C
Vss Gate-to-Source Voltage t 20 V
EAs Single Pulse Avalanche Energy © 22 mJ
IAR Avalanche Current © See Fig. 16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy © mJ
dv/dt Peak Diode Recovery dv/dt © 12 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20 °C/W
ReJA Junction-to-Ambient C9C9 - 62.5
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08/02/ 1 0
IRF7103QPbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID = 1 mA
Roam) Static Drain-to-Source On-Resistance - - 130 mg Vss = lov, ID = 3.OA ©
- - 200 l/cis = 4.5V, ID = 1.5A ©
VSS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = Vss, ID = 250pA
gfs Forward Transconductance 3.4 - - S VDs = 15V, ID = 3.0A
loss Drain-to-Source Leakage Current _- _- 2250 PA :3: : f/g,' "t: : g, T; = 55°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
% Total Gate Charge - 10 15 ID = 2.0A
Qgs Gate-to-Source Charge - 1.2 - nC Ihos = 40V
di Gate-to-Drain ("Miller") Charge - 2.8 - l/ss = 10V
td(on) Turn-On Delay Time - 5.1 - VDD = 25V ©
t, Rise Time - 1.7 - ns ID = 1.0A
td(oti) Turn-Off Delay Time - 15 - Rs = 6.09
tt Fall Time - 2.3 - RD = 259
Ciss Input Capacitance - 255 - Vas = 0V
Coss Output Capacitance - 69 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 29 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 3.0 A showing the
ISM Pulsed Source Current - - 12 integral reverse s
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V T, = 25°C, Is = 1.5A, Vas = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25°C, Ir = 1.5A
Qrr Reverse Recovery Charge - 45 67 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by © Starting To = 25°C, L = 4.9mH
max. junction temperature. RG = 259, IAS = 3.0A. (See Figure 12).
© Pulse width S 400ps; duty cycle s: 2%. s ISDS 2.0A, di/dt C 155A/ps, V00 C V(BR)DSSv
© Surface mounted on 1 in square Cu board To f 175°C
© Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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