IRF6718L2TR1PBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.applications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 25 VDS ±20V Gate- ..
IRF6718L2TRPBF , DirectFET Power MOSFET
IRF6721STRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6724MTRPBF , Benchmark MOSFETs Product Selection Guide
IRF6725MTRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6729MTRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance.
IS82C59A-12X96 , CMOS Priority Interrupt Controller
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C84A ,CMOS Clock Generator Driver
IS82C85 ,CMOS Static Clock Controller/GeneratorFeatures Description• Generates the System Clock For CMOS or NMOS The Intersil 82C85 Static CMOS Cl ..
IS82C86H-5 ,CMOS Octal Bus Transceiver82C86HMarch 1997 CMOS Octal Bus Transceiver
IRF6718L2TR1PBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.
PD - 97395E
Intermtbfhol 1RF6718L2TRPbF
TOR Red' ' lRF6718L2TR1PbF
DirectFET© Power MOSFET 2
q RoHS Compliant Containing No Lead and Bromide C) Typical values (unless otherwise specified)
q Dual Sided Cooling Compatible oo
0 Ultra Low Package Inductance
Voss Vas RDS(on) RDS(on)
25V max e2UN max 0.50mQ@10V
[email protected]0 Very Low RDsz) for Reduced Conduction Losses
q Optimized for Active O-Ring / Efuse Applications 09 tot tu, Ass th, tu, Vgsoh)
0 Compatible with existing Surface MountTechniques co 64nC 20nC 9.4nC 67nC 50nC 1.9V
'iii),;,),
L6 DirectFET© ISOMETRIC
Applicable DirectFET Outline and Substrate Outline CO
IS1IS2|SBI |M2|M4| |L4I.IL8I
Description
The IRF6718L2TRPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETm packaging to achieve
the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when
application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The
IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V © 61
ID @ T, = 70°C Continuous Drain Current, Vas @ 10V © 52 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V co 270
IDM Pulsed Drain Current (S) 490
EAS Single Pulse Avalanche Energy © 530 mJ
[AR Avalanche Current s 49 A
4 Cie'.'." 14.0
I = 61 A (D
a l Is'. 12.0
E; 3 g 10.0
8 S 8.0
(D 2 3
E t T J = 125°C , 6.0
tO "r'
(-l. 1 Irs......., S, 4.0
>, ttt
- T J = 25°C -- 0. 2.0
o go 0.0
2 4 6 8 10 O 20 40 60 80 100 120 140 160 180
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. © TC measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.44mH, Rs = 259, lAs = 49A.
1
07/27/1 1
IRF6718L2TR/TR1PbF International
TOR iiectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = OV, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 11 - mV/°C Reference to 25°C, Ir) = 1mA
Roswn) Static Drain-to-Source On-Resistance - 0.50 0.70 mo Vss = 10V, ID = 61A co
- 1.0 1.4 Vas = 4.5V, ID = 49A ©
VGSM Gate Threshold Voltage 1.35 1.90 2.35 v VDs = Ves. ID = 150uA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -7.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 20V, I/ss = 0V
- - 150 Vos = 20V, Vss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 820 - - S Vos = 13V, b = 49A
q, Total Gate Charge - 64 96
0951 Pre-Vth Gate-to-Source Charge - 18 - Vos = 13V
0952 Post-Vth Gate-to-Source Charge - 9.4 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 20 - ID = 49A
ngd, Gate Charge Overdrive - 16.6 - See Fig. 18
st Switch Charge (0952 + di) - 29.4 -
Qass Output Charge - 50 - nC Vos = 16V, I/ss = 0V
Rs Gate Resistance - 0.90 - Q
tum) Turn-On Delay Time - 67 - VDD = 13V, Ves = 4.5V C)
t, Rise Time - 140 - ns ID = 49A
tom Turn-Off Delay Time - 47 - Rs-- 6.89
ti Fall Time - 53 -
Ciss Input Capacitance - 8910 - Vss = 0V
Cass Output Capacitance - 2310 - pF Vos = 13V
CrSS Reverse Transfer Capacitance - 1115 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 61 MOSFET symbol D
(Body Diode) A showing the H2:
G, Pulsed Source Current - - 490 integral reverse G g
(Body Diode) s p-n junction diode. q
Va, Diode Forward Voltage - - 1.0 v Tu = 25°C, ls = 49A, Vas = 0V ©
trr Reverse Recovery Time - 39 59 ns Tu = 25°C. IF = 49A
a,, Reverse Recovery Charge - 67 100 nC di/dt = 200A/ps C)
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle I 2%.
2
