IRF6716MTR1PBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance.applications.Absolute Maximum RatingsParameter Max. UnitsV 25Drain-to-Source Voltage VDS ±20V Gate- ..
IRF6717MTRPBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance.applications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 25 VDSV Gate-to-S ..
IRF6718L2TR1PBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.applications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 25 VDS ±20V Gate- ..
IRF6718L2TRPBF , DirectFET Power MOSFET
IRF6721STRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6724MTRPBF , Benchmark MOSFETs Product Selection Guide
IS82C59A-12 ,CMOS Priority Interrupt ControllerFeatures Description• 12.5MHz, 8MHz and 5MHz Versions Available The Intersil 82C59A is a high perfo ..
IS82C59A-12X96 , CMOS Priority Interrupt Controller
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C84A ,CMOS Clock Generator Driver
IS82C85 ,CMOS Static Clock Controller/GeneratorFeatures Description• Generates the System Clock For CMOS or NMOS The Intersil 82C85 Static CMOS Cl ..
IRF6716MTR1PBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance.
PD - 97274C
International IRF6716MPbF
TOR. Rectifier IRF6716MTRPbF
DirectFETTM Power MOSFET ©
. RoHs Compliant and Halogen FreeCD Typical values (unless otherwise specified)
0 Low Profile (<0.6 mm) Voss Vas RDSion) RDSion)
q Dual Sided Cooling Compatible C) 25V max e2UN max 1.2mQ@10V 2.0mQ@ 4.5V
0 Ultra Low Package Inductance A tot di 0952 On Qoss Vgs(th)
0 Optimized for High Frequency Switching OD 39nC 12nC 5.3nC 28nC 27nC 1.9V
q Ideal for CPU Core DC-DC Converters
q Optimized for Sync. FET socket of Sync. Buck ConverterC)
q Low Conduction and Switching Losses
q Compatible with existing Surface MountTechniques CD
0 100% Rg tested
MX DirectFETw ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI |M0|m|MT|MP| ll
Description
The IRF6716MPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage t20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V © 39
ID © TA = 70°C Continuous Drain Current, Vss @ 10V © 31 A
ID © TC = 25°C Continuous Drain Current, Vss @ 10V © 180
IDM Pulsed Drain Current co 320
EAS Single Pulse Avalanche Energy © 330 mJ
IAR Avalanche Current Cs) 32 A
i = 40A 0 ID: 32A -
"ti" 5 D l' 'vty==5,'
'"r.i, 4 J DS"
(D 3 ©
.3 1 (D
2 3 4 5 6 7 8 9 10 0 IO 20 30 40 50 60
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. B) Tc measured with thermocouple mounted totop (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.65mH, Re = 259, lAs = 32A.
1
04/30/09
Downloaded from: http://www.datasheetcata|o_q.com/
lRF6716MPbF International
TO.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 17 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 1.2 1.6 m9 Vas = lov, Ir) = 40A co
- 2.0 2.6 Vss = 4.5V, ID = 32A C)
Vesnh) Gate Threshold Voltage 1.4 1.9 2.4 V Vos = Ves, ID = 100PA
AVGS(th>/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos = 25V, Vas = 0V
- - 150 Vos = 25V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 220 - - S Vos = 15V, ID = 32A
q, Total Gate Charge - 39 59
0931 Pre-Vth Gate-to-Source Charge - 10 - VDS = 13V
0952 Post-l/th Gate-to-Source Charge - 5.3 - nC Ves = 4.5V
di Gate-to-Drain Charge - 12 - b = 32A
ngd, Gate Charge Overdrive - 11.7 - See Fig. 2
(h,, Switch Charge (0952 + di) - 17.3 -
Qoss Output Charge - 27 - nC Vos = 16V, Vss = 0V
RG Gate Resistance - 1.0 1.6 Q
td(on) Turn-On Delay Time - 26 - VDD = 13V, Vss = 4.5V C)
t, Rise Time - 105 - ns '0 = 32A
td(ott) Turn-Off Delay Time - 25 - Ra = 1.89
t, Fall Time - 41 - See Fig. 17
Ciss Input Capacitance - 5150 - Vas = 0V
Coss Output Capacitance - 1340 - pF Vos = 13V
Crss Reverse Transfer Capacitance - 610 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 4.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 320 integral reverse s
(Body Diode) © p-n junction diode. ck
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 32A, Ves = 0V C)
t,, Reverse Recovery Time - 28 42 ns TJ = 25°C, IF = 32A
l Reverse Recovery Charge - 28 42 nC di/dt = 200A/ps OD
Notes:
co Pulse width S 400ps; duty cycle S 2%.
C) Repetitive rating; pulse width limited by max. junction temperature.
2
Downloaded from: http://www.datasheetcata|o_q.com/
