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IRF6691TR1PBF
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.
PD - 97204
IFlF6691PbF
IRF6691TRPbF
DirectFETTM Power MOSFET C)
Typical values (unless otherwise specified)
international PROVISIONAL
TOR Rectifier
o RoHs Compliant co
o Lead-Free (Qualified up to 260°C Reflow) VDSS Vas R0503") RDS(on)
qt Application Specific MOSFETs 20V max t121/ max 1.2mQ© ION/ 1.8mQ@ 4.5V
0 Ideal for CPU Core DC-DC Converters
Q Q Q Q O V
a Low Conduction Losses il tot gd gs2 rr oss gs(th)
q High Cdv/dt Immunity 47nC 15nC 4.4nC 26nC 30nC 2.0V
qt Low Profile (<0.7mm)
q Dual Sided Cooling Compatible C) I s
0 Compatible with existing Surface Mount Techniques co D tre D
MT DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)OD
ISOISXISTI IMQIMXIII I I I
Description
The IRF6691PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, intra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The lRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the On
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t12
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V Cs) 32
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V (3) 26 A
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V © 180
IDM Pulsed Drain Current s 260
EAS Single Pulse Avalanche Energy© 230 m]
IAR Avalanche Current s 26 A
ID =32A
Typical RDS(on) (ITIQ)
O —* N 0) J> O1 0) \l 00 (D O
VGS' Gate-to-Source Voltage (V)
T J = 25°C
2 3 4 5 6 7 8 9 IO 0 10 20 30 4O 50 60
T t I t h
VGS Gate -to -Source Voltage (V) 0G 0 a Ga e C arge (nC)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. © Tc measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T] = 25°C, L = 0.72mH, Rs = 259, MS = 26A.
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IRF6691 PbF PROVISIONAL International
TOR Rectifier
Static tii! Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 1.0mA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 12 - mV/°C Reference to 25°C: ID = 10mA
RDS(on) Static Drain-to-Source On-Resistance - 1.8 2.5 mQ Vas = 4.5V, ID = 12A CrD
- 1.2 1.8 VGS=1OV,|D=15A®
VGS(th) Gate Threshold Voltage 1.6 - 2.5 V VDs = VGS, ID = 250pA
AVGS(,h,/ATJ Gate Threshold Voltage Coefficient - -4.1 - mV/°C ID = 10mA, reference to 25°C
- - 1.4 mA I/rs = 20v, Vas = OV
loss Drain-to-Source Leakage Current - - 500 HA VDS = 16V, Vss = 0V
- - 5 mA I/rs = 16V, l/ss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
gfs Forward Transconductance 110 - - S I/rs = 10V, ID = 26A
q, Total Gate Charge - 47 71
0931 Pre-Vth Gate-to-Source Charge - 14 - l/rs = 10V
0952 Post-Vth Gate-to-Source Charge - 4.4 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 15 - ID = 17A
ngd, Gate Charge Overdrive - 14 - See Fig. 14
st Switch Charge (0952 + Ogd) - 19 -
Qoss Output Charge - 30 - nC VDS = 10V, Ves = 0V
Re Gate Resistance - 0.60 1.5 Q
Yawn) Tum-On Delay Time - 23 - VDD = 16V, VGS = 4.5V Cr)
t, Rise Time - 95 - ns ID = 26A
tam) Tum-Off Delay Time - 25 - Clamped Inductive Load
tr Fall Time - IO - See Fig. 15 & 16
Ciss Input Capacitance - 6580 - Vss = 0V
Coss Output Capacitance - 2070 - pF VDS = 10V
Crss Reverse Transfer Capacitance - 840 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 200. MOSFET symbol .7 ", .
(Body Diode) A showing the l i,'. i,
ISM Pulsed Source Current - - 260 integral reverse “A a _
(Body Diode) co p-n junction diode. i
VSD Diode Forward Voltage - - 0.65 V Tu = 25°C, ls = 25A, l/ss = 0V (rD
tn Reverse Recovery Time - 32 48 ns T J = 25°C, IF = 25A
Q" Reverse Recovery Charge - 26 39 n0 di/dt = 100A/ps CD See Fig. 17
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 150A.
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