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IRF6678
DirectFET Power MOSFET
International PD-96979B
Tait, Rectifier IRF6678
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
q Low Profile (
0 Dual Sided Cooling Compatible co
q Ultra Low Package Inductance
Voss Vas RDS(on) RDS(on)
30V max e2Ol max 1.7mQ@ 10V 2.3mQ© 4.5V
q Optimized for High Frequency Switching C) 09 tot tu, 0952 th, Qoss 'Kee
q Ideal for CPU Core DC-DC Converters 43nC 15nC 4.0nC 46nC 28nC 1.8V
0 Optimized for for SyncFET Socket of Sync. Buck Com/erterC0
q Low Conduction and Switching Losses
0 Compatible with Existing Surface Mount Techniques C)
o(iit D
DirectFETrM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
Isalsxlsrl IMQIMIMTI I I ll
Description
The IRF6678 combines the latest HEXFET© power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including RDSM and gate charge to minimize losses in the SyncFET socket.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V © 30
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V © 24 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V © 150
IDM Pulsed Drain Current C3) 240
EAS Single Pulse Avalanche Energy 60 210 mJ
IAR Avalanche Current co 24 A
E 15 g
cn 10 =1
.9 T = 125°C d,
CL 5 Ps. J lis'
'3 Rt, (D
T J = 25°C a
O I I go
0 1 2 3 4 5 6 7 8 9 1O 0 10 20 30 40 50 60
VGS Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co Starting Tu = 25°C, L = 0.75mH, Rs = 259, IAS = 23A.
© Click on this section to link to the DirectFET MOSFETs. © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © Tc measured with thermocouple mounted to top (Drain) of part.
1
04/18/05
IRF6678
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.7 2.2 m9 Vas = 10V, ID = 30A s
- 2.3 3.0 Vss = 4.5V, ID = 24A G)
Vesuh) Gate Threshold Voltage 1.35 - 2.25 V Vos = Vss, ID = 250pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -6.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA VDs = 24V, VGs = 0V
- - 150 I/rs = 24V, I/as = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 100 - - S Vros = 15V, ID = 24A
Qg Total Gate Charge - 43 65
0931 Pre-Vth Gate-to-Source Charge - 12 - l/rs = 15V
0932 Post-Vth Gate-to-Source Charge - 4.0 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 15 '0 = 24A
ngd, Gate Charge Overdrive - 12 - See Fig. 17
st Switch Charge (0952 + di) - 19 -
Qoss Output Charge - 28 - nC Vros = 16V, l/ss = ov
Rs Gate Resistance - 1.0 2.2 Q
td(on) Turn-On Delay Time - 21 - VDD = 16V, l/ss = 4.5V ©
t, Rise Time - 71 - ns Ir, = 24A
tdom Turn-Off Delay Time - 27 - Clamped Inductive Load
t, Fall Time - 8.1 -
Ciss Input Capacitance - 5640 - Vas = 0V
Coss Output Capacitance - 1260 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 570 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3.5 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 240 integral reverse G (n/
(Body Diode) © p-n junction diode. q
Vso Diode Forward Voltage - 0.78 1.2 V T, = 25°C, ls = 24A, I/ss = ov S
tr, Reverse Recovery Time - 43 65 ns TJ = 25°C, h: = 24A
a,, Reverse Recovery Charge - 46 69 nC di/dt = 100A/ps s
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
G) Pulse width 5 400ps; duty cycle I 2%.
