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IRF6668-IRF6668TRPBF
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes.
PD - 97232A
|RF6668PbF
IRF6668TRPbF
International
TOR Rectifier
o RoHs Compliant co DirectFETTM Power MOSFET ©
q Lead-Free (Qualified up to 260°C Reflow) Typical values (unless otherwise specified)
0 Application Specific MOSFETs Voss Vas R0503")
0 Ideal for High Performance Isolated Converter 80V max t201/ max 12mQ© 10V
Primary Switch Socket Q Q Q Q Q V
qt Optimized for Synchronous Rectification fl tot gd gs2 rr oss ms th
. 22nC 7.8nC 1.6nC 40nC 12nC 4.0V
q Low Conduction Losses
q High Cdv/dt Immunity
0 Low Profile (
q Dual Sided Cooling Compatible co o a 11L" ' o
q Compatible with existing Surface Mount Techniques co '
M2 DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
I SQ I SX I ST I I MO I MX I MT I ME I I I I
Description
The |RF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The |RF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(s10%) or 36V-60V
ETSI input voltage range systems. The |RF6668PbF is also ideal for secondary side synchronous rectification in regulated
isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage t20
ID @ Tc = 25°C Continuous Drain Current, l/tss @ 10V 3D 55
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V CO 44 A
IDM Pulsed Drain Current s 170
EAS Single Pulse Avalanche Energy © 24 mJ
IAR Avalanche Current S 23 A
'iii'." 12.0
57 ID 12A .l'ss.s 10.0
"iz," 'li 8.0
'iii" g 6.0
E T J = 125°C ,
J,)', ii 4.0
r- T J = 25°C , 2.0
J' 0.0
4 6 8 10 12 14 16 o 2 4 6 81012141618202224
VGS, Gate -to -Source Voltage (V) Cts, Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
CO Click on this section to link to the appropriate technical paper. © Tc measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T: = 25°C, L = 0.088mH, Rs = 25Q, lAs = 23A.
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IRF6668PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Bl/oss Drain-to-Source Breakdown Voltage 80 - - V Vss = 0V, lo = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.097 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 12 15 m9 Vas = 10V, ID = 12A ©
VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V VDS = Ves. ID = 100PA
AVGSOm/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 20 PA VDS = 80V, I/ss = 0V
- - 250 Vros = 64V, l/ss = 0V, T J = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGs = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 22 - - S 1/ros = 10V, ID = 12A
q, Total Gate Charge - 22 31
0981 Pre-Vth Gate-to-Source Charge - 4.8 - I/os = 40V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC Ves = 10V
di Gate-to-Drain Charge - 7.8 12 '0 = 12A
ngdr Gate Charge Overdrive - 7.8 - See Fig. 15
st Switch Charge (0952 + di) - 9.4 -
Qoss Output Charge - 12 - nC 1/ros = 16V, Ves = 0V
RG(|n1ernaI) Gate Resistance - 1.0 - Q
td(on) Turn-On Delay Time - 19 - VDD = 40V, l/ss = 10V ©
t, Rise Time - 13 - lo = 12A
td(oit) Turn-Off Delay Time - 7.1 - ns Rs = 6.29
t, Fall Time - 23 - See Fig. 16 & 17
Ciss Input Capacitance - 1320 - Vas = 0V
Coss Output Capacitance - 310 - pF 1/ros = 25V
Crss Reverse Transfer Capacitance - 76 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 81 MOSFET symbol D
(Body Diode) A showing the Cr,
ISM Pulsed Source Current - - 170 integral reverse G E
(Body Diode) s p-n junction diode. Fl
I/s, Diode Forward Voltage - - 1.3 V TJ = 25°C. ls = 12A, l/ss = 0V C)
trr Reverse Recovery Time - 34 51 ns TJ = 25°C. IF = 12A
0,, Reverse Recovery Charge - 40 60 nC di/dt = 100A/ps co See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
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