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IRF6665TR1PBF-IRF6665TRPBF
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes.
PD - 97230A
International IRF6665PbF
DIGITAL AUDIO MOSFET
TOR Rectifier IlRF6665TRPbF
Key Parameters
Features
. Latest MOSFET Silicon technology Vos 100 V
. Key parameters optimized for Class-D audio amplifier RDs(on) typ. @ I/ss = 10V 53 m9
applications
. Low RDSWU for improved efficiency Qg typ. 8.7 nC
. Low Qg for better THD and improved efficiency Ream) typ. 1.9 Q
a Low Q,, for better THD and lower EMI
q Low package stray inductance for reduced ringing and lower
. Can deliver up to 100W per channel into 89 with no heatsink &
q Dual sided cooling compatible 0 E; s
. Compatible with existing surface mount technologies 0 D
o RoHS compliant containing no lead or bromide
oLead-Free (Qualified up to 260°C Reflow)
SH DirectFET'" ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
IsalsxlsTlallMalMxlMTlMNl ll
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETrM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Ves Gate-to-Source Voltage 1 20
ID @ To = 25°C Continuous Drain Current, Ves © 10V 19
ID © TA = 25°C Continuous Drain Current, Ves @ 10V 4.2 A
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 3.4
'DM Pulsed Drain Current T 34
PD @TC = 25°C Maximum Power Dissipation 42 W
PD @TA = 25°C Power Dissipation © 2.2
PD ©T, = 70°C Power Dissipation © 1.4
Linear Derating Factor 0.017 W/°C
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient ©© _ 58 oC/W
ROJA Junction-to-Ambient ©© 12.5 -
ROJA Junction-to-Ambient ©© 20 -
Row Junction-to-Case ©© - 3.0
ROJ.pCB Junction-to-PCB Mounted 1.4 -
Notes C) through & are on page 2
1
08/25/06
IlRF6665PbF International
TOR Rectifier
Static tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BH)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 53 62 m9 Ves = 10V, ID = 5.0A ©
Vesuh) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 yA VDs = 100V, Vas = 0V
- - 250 Vos = 80V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage .__- -- 100 nA Vas = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -20V
Ream) Internal Gate Resistance - 1.9 2.9 Q
Dynamic © T = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 6.6 - - S Vos = 10V, ID = 5.0A
q, Total Gate Charge - 8.4 13 Vos = 50V
0951 Pre-Vth Gate-to-Source Charge - 2.2 - Vss = 10V
0952 Post-Vth Gate-to-Source Charge - 0.64 - ID = 5.0A
di Gate-to-Drain Charge - 2.8 - nC See Fig. 6 and 17
ngd, Gate Charge Overdrive - 2.8 -
st Switch Charge (Q952 + di) - 3.4 -
tdion) Turn-On Delay Time - 7.4 - VDD = 50V
t, Rise Time - 2.8 - ID = 5.0A
tom Turn-Off Delay Time __- 14 -.-.- ns Re = 6.09
t, Fall Time - 4.3 - Vas = 10V ©
Ciss Input Capacitance - 530 -- Vss = 0V
Coss Output Capacitance - 110 - VDs = 25V
Crss Reverse Transfer Capacitance - 29 - pF f = 1.0MHz
Cuss Output Capacitance - 510 - Vss = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 67 - Vss = 0V, Vos = 80V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 130 - Vss = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 11 mJ
IAR Avalanche Current C) -- 5.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 38 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 34 integral reverse G
(Body Diode) LO p-n junction diode. S
VSD Diode Forward Voltage -- -- 1.3 V TJ = 25°C, ls = 5.0A, VGS = 0V C)
tr, Reverse Recovery Time - 31 -- ns TJ = 25°C, IF = 5.0A, Vor, = 25V
Qrr Reverse Recovery Charge - 37 - nC di/dt = 100A/ps ©
Notes:
© Used double sided cooling , mounting pad.
Q) Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
Tc measured with thermal couple mounted to top
(Drain) of part.
(O Repetitive rating; pulse width limited by
max. junction temperature.
© Starting Tu = 25°C, L = 0.89mH, Rs = 259, IAS = 5.0A.
© Surface mounted on 1 in. square Cu board.
© Pulse width I 400ps; duty cycle 3 2%. © Re is measured at Tu of approximately 90°C.
© Coss tff. it. a fixed capaci’fance tat Igi-ves the same & Based on testing done using a typical device & evaluation board
charging time as Coss while Vros Is rlsmg from 0 to 80% l/ross. at Vbus=t45V, fsw=400KHz, and TA=25°C. The delta case
temperature ATC is 55°C.
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