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IRF6648TRPBF
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes.
PD - 97225A
IFIF6648PbF
IRF6648TRPbF
International
TOR Rectifier
. RoHs Compliant co DirectFETTM Power MOSFET ©
q Lead-Free (Qualified up to 260°C Reflow) Typical values (unless otherwise specified)
0 Application Specific MOSFETs VDss VGS RDSWI)
0 Optimized for Synchronous Rectification for 60V max :20V max 5.5mQ© 10V
5V to 12V outputs
qt Low Conduction Losses
q Ideal for 24V input Primary Side Forward Converters
th, tot thy, 0952 On Qoss vgsah)
36nC 14nC 2.7nC 37nC 21nC 4.0V
q Low Profile (
0 Dual Sided Cooling Compatible co l _
q Compatible with existing Surface Mount Techniques co r, G ie', S D
MN DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISHISJISPI IMZIEEDI I I I ll
Description
The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as
a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage :20
ID @ TC = 25°C Continuous Drain Current, Vss © 10V © 86
ID @ TC = 70°C Continuous Drain Current, Vss @ 10V © 69 A
IDM Pulsed Drain Current s 260
EAs Single Pulse Avalanche Energy © 47 mJ
IAR Avalanche Current s 34 A
'i" 12.0
ID = 17A a)
a .,ils,' 10.0
"E" t 8.0
S.. S
(n 3 6.0
f tf,'o'
a 5.3 4.0
.L2 T = 125°C .9,
% J <6
F- (5 2.0
T J = 25°C d5
J' 0.0
4 6 8 10 12 14 16 o 5 10 15 20 25 30 35 40
VGS Gate -to -Source Voltage (V) Qs, Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
CO Click on this section to link to the appropriate technical paper. © Tc measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T: = 25°C, L = 0.082mH, Rs = 25Q, MS = MA.
1
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IRF6648PbF
International
TOR Rectifier
Electrical Characteristic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 - - V Vss = OV, ID = 250PA
ABI/ross/AT, Breakdown Voltage Temp. Coefficient - 0.076 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.5 7.0 m9 I/ss = lov, ID = 17A ©
VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V VDS = l/ss, ID = 150UA
AVGSom/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
IDSS Drain-to-Source Leakage Current - - 20 PA VDS = 60V, Ves = 0V
- - 250 Vos = 48V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 31 - - S VDs = 10V, '0 = 17A
q, Total Gate Charge - 36 50
0931 Pre-Vth Gate-to-Source Charge - 7.5 - VDS = 30V
0932 Post-Vth Gate-to-Source Charge - 2.7 - nC Vas = 10V
di Gate-to-Drain Charge - 14 21 ID = 17A
ngd, Gate Charge Overdrive - 12 - See Fig. 15
st Switch Charge (0952 + di) - 17 -
Qoss Output Charge - 21 - nC VDs = 16V, Vas = 0V
Re (Internal) Gate Resistance - 1.0 _ Q
tam) Turn-On Delay Time - 16 - VDD = 30V, l/as = 10V ©
t, Rise Time - 29 - ID = 17A
tdt, Fall Time - 13 - See Fig. 16 & 17
Ciss Input Capacitance - 2120 - Ves = 0V
Coss Output Capacitance - 600 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 170 -- f = 1.0MHz
Coss Output Capacitance - 2450 - Ves = 0V, l/os = 1.0V, f=1.0MHz
Coss Output Capacitance - 440 - Vas = OV, l/os = 48V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 81 MOSFET symbol D
(Body Diode) A showing the Lt
G, Pulsed Source Current - - 260 integral reverse G E
(Body Diode) s p-n junction diode. fl
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 17A, Ves = 0V ©
trr Reverse Recovery Time - 31 47 ns TJ = 25°C, IF = 17A, VDD = 30V
Q,, Reverse Recovery Charge - 37 56 n0 di/dt = 100A/us CD See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 3 400ps; duty cycle 3 2%.
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