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IRF6646TR1
Leaded A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes.
. PD-96995E
international
TOR Rectifier IRF6646
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHS compliant containing no lead or bromide co
q Low Profile (<0.7 mm)
qt Dual Sided Cooling Compatible co
q Ultra Low Package Inductance 09 tot tAr, V9503)
q Optimized for High Frequency Switching co 36nC 12nC 3.8V
0 Ideal for High Performance Isolated Converter
Primary Switch Socket
q Optimized for Synchronous Rectification I _ s I
q Low Conduction Losses G tu
q Compatible with existing Surface Mount Techniques 0)
Kass Vas RDS(on)
80V max t201/ max 7.6m§2@ 10V
DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMalMxlMTlml I ll
Description
The IRF6646 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(t10%) or 36V to 60V ETSI input voltage
range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses
in the device coupled with the high level ofthermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 80 V
Vos Gate-to-Source Voltage :20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V © 12
ID @ TA = 70°C Continuous Drain Current, Ves © 10V © 9.6 A
lo @ TC = 25°C Continuous Drain Current, Vas @ 10V © 68
IBM Pulsed Drain Current S 96
EAS Single Pulse Avalanche Energy © 230 mJ
IAR Avalanche Current s 7.2 A
0.05 E 12.0
ID = 7.2A 8,
A 0.04 E 10.0
"E" > 8.0
fj) 0.03 g
a g 6.0
E 0.02 f,'
g "r' 4.0
>, tif
r- 0.01 o O 2.0
J = 25 a
0 go 0.0
4 6 8 10 12 14 16 0 10 20 30 40
VGS Gate -to -Source Voltage (V) Fi 2 . QG Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage lg . Typical Total Gate Charge vs. Gate-to-Source
Voltage
Notes:
C) Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. co Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 8.8mH, Rs = 25Q, Me = 7.2A.
1
1 1/04/05
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IRF6646
International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 80 - - V Vss = 0V, ID = 250pA
ABI/oss/NL Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDSM Static Drain-to-Source On-Resistance 7.6 9.5 m9 Vss = 10V, ID = 12A C)
VGSM Gate Threshold Voltage 3.0 - 4.9 V Ws = Vss, ID = 150pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 20 HA VDs = 80V, I/ss = 0V
- - 250 Vos = 64V, I/ss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 17 - - S Vos = 10V, ID = 7.2A
q, Total Gate Charge - 36 50
0931 Pre-Vth Gate-to-Source Charge - 7.6 - VDs = 40V
0932 Post-Vth Gate-to-Source Charge - 2.0 - nC Vss = 10V
di Gate-to-Drain Charge - 12 ID = 7.2A
ngd, Gate Charge Overdrive - 14 - See Fig. 17
st Switch Charge (0932 + di) - 14 -
Qoss Output Charge - 18 - nC Vos = 16V, Ves = 0V
Rs Gate Resistance - 1.0 - Q
tum) Turn-On Delay Time - 17 - VDD = 40V, l/ss = 10V co
t, Rise Time - 20 - ID = 7.2A
tdom Turn-Off Delay Time - 31 - ns RG=6.2Q
t, Fall Time -- 12 -
Ciss Input Capacitance --.- 2060 -.-.- Ves = 0V
Cass Output Capacitance -- 480 -- pF Vos = 25V
Crss Reverse Transfer Capacitance --- 120 --- f = 1.0MHz
Coss Output Capacitance - 2180 - VGS = 0V, Vos = 1.0V, f=1.0MHz
Coss Output Capacitance - 310 - VGS = 0V, Vos = 64V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5© MOSFET symbol D
(Body Diode) A showing the Lr,
ISM Pulsed Source Current - - 96 integral reverse G n
(Body Diode) © p-n junction diode. fl
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 7.2A, VGS = 0V co
trr Reverse Recovery Time - 36 54 ns TJ = 25°C, IF = 7.2A, VDD = 40V
Qrr Reverse Recovery Charge - 48 72 nC di/dt = 100A/ps co
Notes:
CO Pulse width I 400ps; duty cycle f 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
© Thermally limited and used Reja to calculate.
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