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IRF6646
DirectFET Power MOSFET
International PD-96995A
Tait, Rectifier IRF6646
DirectFET"VI Power MOSFET ©
Typical values (unless otherwise specified)
o RoHS compliant containing no lead or bromide C)
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
q Ultra Low Package Inductance 09 tot di Vgs(th)
0 Optimized for High Frequency Switching C) 36nC 12nC 3.8V
0 Ideal for High Performance Isolated Converter
Primary Switch Socket
0 Optimized for Synchronous Rectification
0 Low Conduction Losses
0 Compatible with existing Surface Mount Techniques OD
VDss Vas R05(on)
80V max t201/ max 7.6m52@ 10V
Y'itd
DirectFETrM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMalMxlMTlml I I I
Description
The IRF6646 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal inputTelecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage $20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V © 12
ID @ TA = 70°C Continuous Drain Current, Vss © 10V © 9.6 A
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V co 68
IBM Pulsed Drain Current s 96
EAS Single Pulse Avalanche Energy © 230 mJ
IAR Avalanche Current 6) 7.2 A
0.05 Si" 12.0 I
ID = 6.2A 8, 10 0 ID: 7.2A Vac-- 40K
A 0.04 g . " I
9, g VDS: 16v\/,i:-) 0.03 8 //’
o 8 6.0
- 0.02 , 'pt'''''''"
8 5.3 4.0 ’
.Q 2 s,,,w'''"
:>, cu
F- 0.01 o o 2.0
J = 25 a
0 J' 0.0
4 6 8 10 12 14 16 0 IO 20 30 40
VGS Gate -to -Source Voltage (V) . as Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source
Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 8.8mH, Rs = 25Q, MS = 7.2A.
1
06/08/05
IRF664
International
TOR Rectifier
Static @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 80 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 7.6 9.5 m9 Vss = IOM, ID = 12A C)
Vssith) Gate Threshold Voltage 2.8 --.-. 4.8 V Vos = Ves. ID = 150UA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA VDS = 80V, I/ss = 0V
- - 250 Vos = 64V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 17 - - S VDS = 10V, ID = 7.2A
q, Total Gate Charge - 36 50
0951 Pre-Vth Gate-to-Source Charge - 7.6 - VDs = 40V
0952 Post-Vth Gate-to-Source Charge - 2.0 - nC Veg = 10V
di Gate-to-Drain Charge - 12 ID = 7.2A
ngd, Gate Charge Overdrive - 14 - See Fig. 17
st Switch Charge (0952 + di) - 14 -
Qoss Output Charge - 18 - nC VDS = 16V, l/ss = 0V
Rs Gate Resistance - 1.0 - Q
td(on) Turn-On Delay Time - 17 - VDD = 40V, l/ss = 10V co
t, Rise Time - 20 - ID = 7.2A
td(ott) Turn-Off Delay Time - 31 - ns RG=629
tf Fall Time - 12 -
Ciss Input Capacitance - 2060 - Ves = 0V
Coss Output Capacitance - 480 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Coss Output Capacitance - 2180 - l/ss = 0V, VDs = 1.0V, f=1.0MHz
Coss Output Capacitance - 310 - l/ss = 0V, l/cs = 64V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5© MOSFET symbol D
(Body Diode) A showing the L,-i-,
ISM Pulsed Source Current - - 96 integral reverse G C,
(Body Diode) © p-n junction diode. ck
Va, Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 7.2A, l/ss = 0V C)
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = 7.2A, VDD = 40V
Qrr Reverse Recovery Charge - 48 72 nC di/dt = 100A/ps C)
Notes:
co Pulse width I 400ps; duty cycle f 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
© Thermally limited and used Reja to calculate.
