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IRF6641
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes.
International
TOR Rectifier
DIGITAL AUDIO MOSFET
|RF6641TRPbF
Features
. Latest MOSFET silicon technology
. Key parameters optimized for Class-D audio ampliher
applications
Low Roswn) for improved efficiency
Low Qg for better THD and improved efficiency
Low er for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
. Can deliver up to 400 W per channel into 89 load in half-bridge
configuration amplifier
. Dual sided cooling compatible
. Compatible with existing surface mount technologies
. RoHS compliant, halogen-free
. Lead-free (qualified up to 260''C reflow)
Key Parameters
Vos 200 V
RDS(ON) typ. @ VGs = 10V 51 mg
09 typ. 34 nC
Ream) typ. 1.0 Q
MZ DirectFETo ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
lstolsxlsTlsHlMtolMxlMTlMNltial
Description
This Digital Audio MOSFET is specifically designed for CIass-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFETe packaging technology.
inductance and resistance when compared to conventional wirebonded SOIC packaging.
DirectFETo packaging technology offers lower parasitic
Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETo package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETo package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF6641PbF DirectFET Medium Can Tape and Reel 4800 |RF6641TRPbF
Absolute Maximum Ratings
Parameter Max. Units
VGS Gate-to-Source Voltage :20 V
ID @ To = 25°C Continuous Drain Current, N/ss @ 10V 26
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 4.6
ID @ T, = 70°C Continuous Drain Current, I/ss @ 10V 3.7 A
IDM Pulsed Drain Current co 37
PD @Tc = 25°C Power Dissipation 89
PD @TA = 25°C Power Dissipation © 2.8 W
PD @TA = 70°C Power Dissipation © 1.8
EAS Single Pulse Avalanche Energy © 46 mJ
IAR Avalanche Current co 11 A
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 ''C
Tsm Storage Temperature Range
Notes co through © are on page 9
fl © 2013 International Rectifier July 1, 2013
ISZR lRF6641TRPbF
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Ambient © - 45
RNA Junction-to-Ambient © 12.5 -
ReJA Junction-to-Ambient © 20 - °CNV
Roos Junction-to-Case (8)© - 1.4
RMPCB Junction-to-PCB Mounted 1.0 -
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
ABN/oss/AT, Breakdown Voltage Temp. Coefficient - 0.23 - V/°C Reference to 25°C, ID = 1.0mA
Roswn) Static Drain-to-Source On-Resistance - 51 59.9 mg I/ss = 10V, ID = 5.5A co
VGsm Gate Threshold Voltage 3.0 4.0 4.9 V Vos = VGS, ID = 150pA
AVGSW Gate Threshold Voltage Coefficient -11 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA Vos = 200V, VGS = 0V
- - 250 Vos = 160V, VGS = 0V, TJ=1250C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
Dynamic ti) Tu = 25°C (unless otherwise specified)
gfs Forward Transconductance 13 - - S Vos = 10V, ID = 5.5A
Q, Total Gate Charge 34 48
0931 Pre-l/tlate-to-Source Charge - 8.7 - I/rs = 100V
Qgsg Post-Vth Gate-to-Source Charge - 1.9 - nC VGS = 10V
di Gate-to-Drain Charge - 9.5 14 ID = 5.5A
ngdr Gate Charge Overdrive - 14 -
st Switch Charge (0952 + di) - 11 - VDS = 16V, VGS = 0V
td(on) Turn-On Delay Time - 16 - VDD = 100V, I/ss = 10V
t, Rise Time - 11 - ns ID = 5.5A
tum) Turn-Off Delay Time - 31 - Re = 6.29
t, Fall Time - 6.5 -
Ciss Input Capacitance - 2290 - I/ss = 0V
Coss Output Capacitance - 240 - I/ns = 25V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz
Coss Output Capacitance - 1780 - VGS=0V, VD3=1.0V, f=1.0MHz
Coss Output Capacitance - 100 - VGS=0V, VDS=160V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 26 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 37 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 5.5A, VGS = 0V GD
trr Reverse Recovery Time - 85 130 ns Tu = 25°C, IF = 5.5A,VDD = 100V
Qrr Reverse Recovery Charge - 320 480 nC di/dt = 100/Ups G)
© 2013 International Rectifier
July 1, 2013
