IRF6637TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes.IRF6637PbFIRF6637TRPbFDirectFETPower MOSFET ..
IRF6638TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 30Drain-to-Source Voltage VDSV Gate-to-S ..
IRF6638TRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.IRF6638PbFIRF6638TRPbFDirectFETPower MOSFET RoHs Compliant ..
IRF6641 ,A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes.applications. Base part number Package Type Standard Pack Orderable Part Number Form Quantity I ..
IRF6641TRPBF , Benchmark MOSFETs Product Selection Guide
IRF6644 ,DirectFETPower MOSFETapplications(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topolo ..
IS80C32-40PQ , CMOS SINGLE CHIP LOW VOLTAGE 8-BIT MICROCONTROLLER
IS80C88-2 ,CMOS 8/16-Bit MicroprocessorFeatures Description• Compatible with NMOS 8088 The Intersil 80C88 high performance 8/16-bit CMOS C ..
IS82C237-12 ,CMOS High Performance Programmable DMA Controllerfeatures for flexible operation.ModeThe 82C237 is designed to be used with an external address• Comp ..
IS82C37A ,CMOS High Performance Programmable DMA ControllerFeatures Description• Compatible with the NMOS 8237A The 82C37A is an enhanced version of the indus ..
IS82C50A-5 ,CMOS Asynchronous Communications Element82C50ACMOS AsynchronousCommunications ElementMarch 1997
IS82C52 ,CMOS Serial Controller InterfaceFeatures Description• Single Chip UART/BRG The Intersil 82C52 is a high performance programmableUni ..
IRF6637TR1PBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes.
International
IeaR Rectifier
PD - 97088
lFlF6637PbF
lRF6637TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHS Compliant co Voss Vas RDS(on) RDS(on)
o Lead-Free (Qualified up to 260°C Reflow)
0 Application Specific MOSFETs 30V max t201/ max 5.7mQ© 10V 8.2m§2@ 4.5V
0 Ideal for CPU Core DC-DC Converters th, tot di Asst on tus, Vgs(th)
o Low Conduction Losses and Switching Losses 11nC 4.0nC 1.0nC gong 9.9nC 1.8V
o Low Profile (
0 Dual Sided Cooling Compatible co
0 Compatible with existing Surface Mount Techniques C)
MP DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)0D
SQ SX ST MQ MX MT INP
Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including R
Absolute Maximum Ratings
) and gate charge to minimize losses in the control FET socket.
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V © 14
ID @ TA = 70°C Continuous Drain Current, Vss © 10V © 11 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V © 59
IBM Pulsed Drain Current 6) 110
EAS Single Pulse Avalanche Energy © 31 mJ
IAR Avalanche Current S 11 A
25 I Ci.-.. 12 I I
ID =14A a, ID=11A VDS=, 24V
A CD 10 l
Cl t6 =
g 20 I-; VDS 15V -sve:s''''"
st':ii 'h' 'ttf'''''"
8 15 g 6 "et
tE \ U.) ",e,,t'"'''''"
- T = 125°C Sl
tit J I 4 j
Fi. IO lc """-------"-aa=, (ll.
>, o /
r- .. 2
TJ = 25°C U) /
V t -t - V It V
GS, Gate o Source o age( ) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
http:l/www.lo_q.com/
© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 0.52mH, Rs = 259, [AS =11A.
5/5/06
IRF6637PbF International
IEZR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250PA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 26 - mV/°C Reference to 25°C, b = 1mA
Roam) Static Drain-to-Source On-Resistance - 5.7 7.7 m9 Vss = 10V, ID = 14A (D
- 8.2 10.8 I/ss = 4.5V, ID =11A ©
VGsah) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = VGS, b = 250pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, l/ss = 0V
- - 150 VDS = 24V, Ves = 0V, Tu = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 38 - - S Vos = 15V, b = 11A
Qg Total Gate Charge - 11 17
0931 Pre-l/th Gate-to-Source Charge - 3.1 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC Ves = 4.5V
di Gate-to-Drain Charge - 4.0 6.0 ID = 11A
ngd, Gate Charge Overdrive - 2.9 - See Fig. 15
st Switch Charge (0952 + di) - 5.0 -
Qoss Output Charge - 9.9 - nC VDS = 16V, Ves = 0V
Rs Gate Resistance - 1.2 - Q
tdon) Turn-On Delay Time - 12 - VDD = 16V, Ves = 4.5V ©
t, Rise Time - 15 - ID = 11A
td(off) Turn-Off Delay Time - 14 - ns Clamped Inductive Load
t, Fall Time - 3.8 -
Ciss Input Capacitance - 1330 - Ves = 0V
Coss Output Capacitance - 430 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the Hi:
G, Pulsed Source Current - - 110 integral reverse G E
(Body Diode) (5) p-n junction diode. fl
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 11A, l/ss = 0V Cr)
trr Reverse Recovery Time - 13 20 ns Tu = 25°C, IF = 11A
Qrr Reverse Recovery Charge - 20 30 nC di/dt = 500A/ps ©
Notes:
co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
http:l/www.lo_q.com/
