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IRF6636TRPBF
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes.
PD - 97219
International IRF6636PbF
Tait, Rectifier IRF6636TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
q RoHs Compliant co
o Lead-Free (Qualified up to 260°C Reflow)
qt Application Specific MOSFETs Voss Vos Rros(on) Rrosion)
q Ideal for CPU Core DC-DC Converters 20V max i20V max 3.2mQ@ 10V 4.6mQ@ 4.5V
q Low Conduction Losses th tot di 0952 On 0055 vgsuh)
0 High Cdv/dt Immunity 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V
q Low Profile (
a Dual Sided Cooling Compatible co “x.
qt Compatible with existing Surface Mount Techniques co tel S gt,--
u: aSt,1d "
D s D , ".: V
ST DirectFETTM lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)®
ISOISXISTI IMOIMXIMTI l I ll
Description
The IRF6636PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
Vas Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V © 18
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V © 15 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V © 81
IBM Pulsed Drain Current s 140
EAS Single Pulse Avalanche Energy © 28 mJ
IAR Avalanche Current s 14 A
20 . . 'iii" so l
I = 18A tD I = 14A
e7 D fd' 5.0 -'D="'_" his-- 16V
éA 15 g 4 0 his-- 10
5. b.' . o,/''"
g 10 g 3.0
tr tss. T J = 125°C 03 v/r-"
F5 """sm, g 2.0
o \ a)
E: 5 'a'
F- TJ = 25°C o., 1.0
0 go 0.0
0 1 2 3 4 5 6 7 8 9 1O 0 10 20 30
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
O) Click on this section to link to the appropriate technical paper. © Tc measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.27mH, Re = 25Q, lAs = 14A.
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IRF6636PbF International
Tcm Rectifier
Static tii) T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Ves = 0V, ID = 250HA
ABI/oss/AT, Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 3.2 4.5 m9 l/ss = lov, ID = 18A ©
- 4.6 6.4 Ves = 4.5V, ID = 14A ©
VGS(th) Gate Threshold Voltage 1.55 - 2.45 V Vos = Ves, b = 250PA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -6.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vros = 16V, Ves = 0V
- - 150 Ws-- 16V, VGS=0V, Tu-- 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 52 - - S VDS = IOM, ID = 14A
Qg Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 5.9 - VDS = 10V
0952 Post-Vth Gate-to-Source Charge - 1.9 - nC Vss = 4.5V
di Gate-to-Drain Charge - 6.1 ID = 14A
Qgodr Gate Charge Overdrive - 4.1 - See Fig. 15
st Switch Charge (0932 + di) - 8.0 -
Qos,s Output Charge - 10 - nC VDS = 10V, I/ss = 0V
Rs Gate Resistance - - 1.5 Q
tam) Turn-On Delay Time - 14 - VDD = 16V, l/ss = 4.5V Cr)
t, Rise Time - 19 - ID = 14A
tam) Turn-Off Delay Time - 16 - ns Clamped Inductive Load
t: Fall Time - 6.2 - See Fig. 16 & 17
Ciss Input Capacitance - 2420 - l/ss = 0V
Coss Output Capacitance - 780 - pF VDS = 10V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 52 MOSFET symbol D
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 140 integral reverse G (nd,
(Body Diode) © p-n junction diode. cl
I/s, Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 14A, VGs = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C. IF = 14A
Qrr Reverse Recovery Charge - 7.3 11 nC di/dt = 1OOA/ps (D See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
co Pulse width 3 400ps; duty cycle 3 2%.
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