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IRF6635TR1PBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
international
TOR Rectifier
o RoHs Compliant co
o Lead-Free (Qualified up to 260°C Reflow)
PD - 97086
IFIF6635PbF
IRF6635TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
0 Application Specific MOSFETs Voss Vos RDS(on) RDS(on)
0 Ideal for CPU Core DC-DC Converters 30V max t201/ max 1.3mQ@ 10V 1.8mQ@ 4.5V
a Law Conduction Loeses tag tot di Asst Q" tus, vgsah)
q High Pf.dt Immunity nc 1750 4.7-nC 48nC 29nC 78v
qt Low Profile (<0.7mm)
q Dual Sided Cooling Compatible C)
0 Compatible with existing Surface Mount Techniques co I 'rea' I
D G tIre D
MX DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISOI srl IMQIt'mIMTI I ll
Description
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
Vrys Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V © 32
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V © 25 A
Irs @ TC = 25°C Continuous Drain Current, Ves © 10V © 180
IDM Pulsed Drain Current s 250
EAS Single Pulse Avalanche Energy © 200 mJ
IAR Avalanche Current s 25 A
Cl 8 £9
E; 6 E
f 4 q,
CL Iii
i 2 0
TJ =25°c
3 4 5 6 7 8 910
VGS, Gate -to Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
O 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
CO Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
http:l/www.lo_q.com/
© TC measured with thermocouple mounted to top (Drain) of part.
s Repetitive rating; pulse width limited by max. junction temperature.
© Starting T: = 25°C, L = 0.63mH, Rs = 259, IAS = 25A.
5/3/06
IRF6635PbF
International
TOR Rectifier
Static tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABI/ross/NL Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C. ID = 1mA
Rome”) Static Drain-to-Source On-Resistance - 1.3 1.8 m9 I/ss = 10V, ID = 32A ©
- 1.8 2.4 vGs = 4.5V, ID = 25A co
Vegan) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 250pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA 1/ros = 24V, Ves = 0V
- - 150 VDS = 24V, l/ss = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -201/
gfs Forward Transconductance 45 - - S Vos = 15V, ID = 25A
09 Total Gate Charge - 47 71
0931 Pre-l/th Gate-to-Source Charge - 12 - 1/ros = 15V
Asst Post-Vth Gate-to-Source Charge - 4.7 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 17 ID = 25A
ngd, Gate Charge Overdrive - 13 - See Fig. 15
QSW Switch Charge (Asst + di) - 22 -
Qoss Output Charge - 29 - nC VDs = 16V, Vss = 0V
Rs Gate Resistance - 1.0 - Q
tdmn) Turn-On Delay Time - 21 - VDD = 16V, Ves = 4.5V Cr)
t, Rise Time - 13 - ID = 25A
tdwm Turn-Off Delay Time - 33 - ns Clamped Inductive Load
t, Fall Time - 8.3 - See Fig. 16 & 17
Ciss Input Capacitance - 5970 - Vss = 0V
Coss Output Capacitance - 1280 - pF 1/ros = 15V
Crss Reverse Transfer Capacitance - 600 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 250 integral reverse G (tl-'.
(Body Diode) s p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V To = 25°C, ls = 25A, VGS = 0V ©
trr Reverse Recovery Time - 20 30 ns T, = 25°C, IF = 25A
Q,, Reverse Recovery Charge - 48 72 nC di/dt = 500A/ps CD See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
http:l/www.lo_q.com/
