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IRF6635TR1
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
PD -9698IF
IRF6635
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
:20V max
International
TOR Rectifier
o RoHs compliant containing no lead or bromide co
qt Low Profile (<0.7 mm)
q Dual Sided Cooling Compatible C)
q Ultra Low Package Inductance
0 Optimized for High Frequency Switching co
q Ideal for CPU Core DC-DC Converters
0 Optimized for SyncFET socket of Sync. Buck Converter0)
q Low Conduction and Switching Losses
qt Compatible with existing Surface Mount Techniques (O tr
30V max
Qg tot
RDS(on)
1.8mf2© 4.5V
RDS(on)
1.3mQ© 10V
0952 on
4.7nC 48nC
Vgs(th)
DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)0D
lsalsxlsrl IMQIIMBIMTI I I I
Description
The IRF6635 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635
has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V © 32
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V © 25 A
ID @ Tc = 25°C Continuous Drain Current, l/tss @ 10V © 180
IDM Pulsed Drain Current © 250
EAS Single Pulse Avalanche Energy q) 200 mJ
IAR Avalanche Current © 25 A
ID = 32A 8,
(I) 25
n: 4 ,
(il 3;;
i3 2 o 0
T J =25 C db
4 5 6 7 8 910
VGS, Gate -to Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET MOSFETs.
© Repetitive rating; pulse width limited by max. junction temperature.
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0 10 20 30
QG Total Gate Charge (nC)
40 50 60
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
CO Starting Tu = 25°C, L = 0.63mH, Rs = 259, IAS = 25A.
© Surface mounted on 1 in. square Cu board, steady state.
© Tc measured with thermocouple mounted to top (Drain) of part.
11/16/05
IRF6635 International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.3 1.8 m9. Vas = lov, ID = 32A s
- 1.8 2.4 Vas = 4.5V, ID = 25A S
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDs = Vss, ID = 250pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current --.-. --..-. 1.0 pA VDS = 24V, VGs = 0V
- - 150 VDS = 24V, Vas = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 45 - - S Vros = 15V, ID = 25A
q, Total Gate Charge - 47 71
0951 Pre-Vth Gate-to-Source Charge - 12 - VDs = 15V
0932 Post-Vth Gate-to-Source Charge - 4.7 - nC l/ss = 4-5V
di Gate-to-Drain Charge - 17 ID = 25A
0900., Gate Charge Overdrive - 13 - See Fig. 15
st Switch Charge (0952 + di) - 22 -
Qoss Output Charge - 29 - nC VDS = 16V, Ves = 0V
Rs Gate Resistance - 1.0 - Q
td(on) Turn-On Delay Time - 21 - VDD = 16V, Ves = 4.5V Cs)
t, Rise Time - 13 --- ID = 25A
tdmm Turn-Off Delay Time - 33 - ns Clamped Inductive Load
t, Fall Time - 8.3 - See Fig. 16 & 17
Ciss Input Capacitance - 5970 - Vas = 0V
Coss Output Capacitance - 1280 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 600 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 250 integral reverse a E
(Body Diode) © p-n junction diode. A
VSD Diode Forward Voltage - - 1.0 V To = 25°C. ls = 25A, Ves = 0V s
t,, Reverse Recovery Time - 20 30 ns To = 25°C, IF = 25A
Q,, Reverse Recovery Charge - 48 72 n0 di/dt = 500A/ps s See Fig. 18
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
(9 Pulse width 5 400ps; duty cycle I 2%.
2
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