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IRF6635
DirectFET Power MOSFET
PD - 96981 B
IRF6635
DirectFET"VI Power MOSFET ©
Typical values (unless otherwise specified)
International
Tait, Rectifier
o RoHs compliant containing no lead or bromide C)
Voss Vos RDS(on) RDS(on)
0 Low Profile (<0.7 mm)
30V max :20V max 1.3mQ© 10V 1.8mf2© 4.5V
o Dual Sided Cooling Compatible C)
0 Ultra Low Package Inductance th tot 09d 0952 th, tu, vgs(t_h)
0 Optimized for High Frequency Switching co 47nC 17nC 4.7nC 48nC 29nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for for SyncFET socket of Sync. Buck Converters
0 Low Conduction and Switching Losses
o Compatible with existing Surface Mount Techniques C)
DirectFETrM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)©
lsalsxlsrl IMQIMIMTI I I I
Description
The IRF6635 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has
been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V © 32
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V © 25 A
Iro @ Tc = 25°C Continuous Drain Current, VGs @ 10V © 180
IDM Pulsed Drain Current co 250
EAS Single Pulse Avalanche Energy 60 200 mJ
IAR Avalanche Current © 25 A
(i.'.
A ID = 32A g
"tC., >
f w‘.’
T J = 25°C a
O 1 2 3 4 5 6 7 8 9 IO 0 10 20 30 40 50 60
VGS Gate -to -Source Voltage (V) % Total Gate Charge mm
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co Starting Tu = 25°C, L = 0.63mH, Rs = 259, IAS = 25A.
© Click on this section to link to the DirectFET MOSFETs. © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © Tc measured with thermocouple mounted to top (Drain) of part.
1
06/02/05
IRF6635
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, b = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 1.3 1.8 m9 l/ss = 10V, ID = 32A ©
- 1.8 2.4 I/ss = 4.5V, ID = 25A (9
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Veg, ID = 250pA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
IDSS Drain-to-Source Leakage Current - - 5.0 pA VDs = 24V, l/ss = 0V
- - 150 I/os = 24v, l/ss = OV, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 45 - - S VDs = 15V, '0 = 25A
09 Total Gate Charge - 47 71
0951 Pre-Vth Gate-to-Source Charge - 12 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 4.7 - nC Ves = 4.5V
di Gate-to-Drain Charge - 17 ID = 25A
ngd, Gate Charge Overdrive - 13 - See Fig. 15
(h,, Switch Charge (0952 + di) - 22 -
Qoss Output Charge - 29 - nC VDs = 16V, Ves = 0V
Rs Gate Resistance - 1.0 - Q
td(on) Turn-On Delay Time - 21 - VDD = 16V, VGS = 4.5V s
t, Rise Time - 13 - ID = 25A
tom Turn-Off Delay Time - 33 - ns Clamped Inductive Load
tf Fall Time - 8.3 -
Ciss Input Capacitance - 5970 - Ves = 0V
Coss Output Capacitance - 1280 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 600 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3.5 MOSFET symbol 0
(Body Diode) A showing the Lr,
ISM Pulsed Source Current - - 250 integral reverse G c,
(Body Diode) © p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V To = 25°C, ls = 25A, VGS = 0V s
t,, Reverse Recovery Time - 20 30 ns To = 25°C, IF = 25A
Q,, Reverse Recovery Charge - 48 72 nC di/dt = 500A/ps s
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
G) Pulse width 5 400ps; duty cycle I 2%.
