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IRF6631-IRF6631TR1PBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 57 amperes.
international
TOR Rectifier
o RoHs Compliant C)
o Lead-Free (Qualified up to 260°C Reflow)
0 Application Specific MOSFETs
0 Ideal for CPU Core DC-DC Converters
0 Low Switching and Conduction Losses
0 Low Profile (<0.7mm)
o Dual Sided Cooling Compatible C)
0 Compatible with existing Surface Mount Techniques 6)
PD - 97217
IRF6631PbF
IRF6631TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
Voss Vas RDS(on) RDS(on)
30V max e2UN max 6.0mS2@ 10V 8.3rnQ© 4.5V
% tot di 0952 on 0055 Vgs(th)
12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V
l G 513 l
DirectFETTM lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
Description
srl IMal
The IRF6631PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that
are critical in synchronous buck converter‘s CtrlFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage :20
lo © TA = 25°C Continuous Drain Current, l/ss @ 10V (3 13
ID @ TA = 70°C Continuous Drain Current, l/ss © 10V O) 10 A
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V C4) 57
IBM Pulsed Drain Current S 100
EAS Single Pulse Avalanche Energy © 13 mJ
IAH Avalanche Current s 10 A
20 . iii] 12.0
ID = 13A an
a .,ils.' 10.0
g 15 N y,
"ij" li' T 125°C 8 8.0
g 10 J _ g 6.0
tr 'NSS,,,, """----..,._, tr)
Tb, 5 = (l,-','
'- T J = 25°C tll 2.0
3 4 5 6 7 8 9 10 o 5 10 15 20 25 30
VGS Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Notes: Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
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© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 0.24mH, Rs = 259, [AS = 10A.
05/29/06
IRF6631PbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Bl/oss Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, b = 250pA
ABI/ross/AT, Breakdown Voltage Temp. Coefficient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.0 7.8 m9 l/tss = 10V, '0 = 13A Cr)
- 8.3 10.8 Vas = 4.5V, ID = 10A ©
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V Vros = Ves. ID = 25pA
AVGs(m)/ATJ Gate Threshold Voltage Coefficient - -5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, I/ss = 0V
- - 150 I/os = 24V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 32 - - S VDs = 15V, ID = 10A
A Total Gate Charge - 12 18
0931 Pre-Vth Gate-to-Source Charge - 3.4 - 1/ros = 15V
0982 Post-Vth Gate-to-Source Charge - 1.1 - nC I/as = 4.5V
di Gate-to-Drain Charge - 4.4 - b = 10A
ngd, Gate Charge Overdrive - 3.1 - See Fig. 15
st Switch Charge (0952 + di) - 5.5 -
Qoss Output Charge - 7.3 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.6 3.0 Q
td(on) Turn-On Delay Time - 15 - VDD = 16V, l/ss = 4.5V ©
t, Rise Time - 18 - ID = 10A
tdwff) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
t, Fall Time - 4.9 - See Fig. 16 & 17
Ciss Input Capacitance - 1450 - Ves = 0V
Coss Output Capacitance - 310 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol D
(Body Diode) A showing the L,-,
ISM Pulsed Source Current - - 100 integral reverse G n
(Body Diode) © p-n junction diode. cl
Va, Diode Forward Voltage - - 1.2 v T1 = 25°C. ls = 10A, I/ss = 0V co
tr, Reverse Recovery Time - 11 17 ns TJ = 25°C, ' = 10A
a,, Reverse Recovery Charge - 10 15 nC di/dt = 500A/ps co See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 3 400ps; duty cycle 3 2%.
2
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