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IRF6623TR1PBF
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes.
PD - 97085
IRF6623PbF
IRF6623TRPbF
International
IeR Rectifier
o RoHS Compliant © DirectFETTM Power MOSFET
o Lead-Free (Qualified up to 260°C Reflow)
q Application Specific MOSFETs Voss RDS(on) max 090:pr
q Ideal for CPU Core DC-DC Converters 20V 5.7mQ@1/ss = 10V 11nC
q Low Conduction Losses
0 High Cdv/dt Immunity
0 Low Profile (
q Dual Sided Cooling Compatible © .1“ 5
qt Compatible with existing Surface Mount Techniques © D s tt
ST DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
so SX (gif MO MX MT
Description
The IRF6623PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param-
eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to
minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, l/tss @ 10V © 55
ID @ TA = 25°C Continuous Drain Current, Ves © 10V (4) 16 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V @ 13
IBM Pulsed Drain Current co 120
PD @Tc = 25°C Power Dissipation Cr) 42
Pry @TA = 25°C Power Dissipation © 1.4 W
PD @TA = 70°C Power Dissipation CO 2.1
EAS Single Pulse Avalanche Energy© 43 mJ
IAR Avalanche Current co 40 A
Linear Derating Factor 0.017 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Ambient @O - 58
RGJA Junction-to-Ambient ©0125 -
ReJA Junction-to-Ambient (00 20 - °C/W
ROJC Junction-to-Case 0)(8) - 3.0
RMPCB Junction-to-PCB Mounted 1.0 -
Notes co through are on page 2
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IRF6623PbF International
IEZR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABI/ross/AT, Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 4.4 5.7 mn I/ss = 10V, ID = 15A ©
- 7.5 9.7 l/ss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.4 - 2.2 V Vos = VGS, ID = 250pA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA VDS = 16V, I/ss = 0V
- - 150 VDS= 16V, VGS=OV,TJ= 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gis Forward Transconductance 34 - - S 1/ros = 10V, ID = 12A
q, Total Gate Charge - 11 17
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 10V
Qgsg Post-Vth Gate-to-Source Charge --- 1.2 --- nC l/ss = 4.5V
di Gate-to-Drain Charge - 4.0 - ID = 12A
ngd, Gate Charge Overdrive - 2.5 - See Fig. 16
st Switch Charge (0952 + di) - 5.2 -
Qoss Output Charge - 8.9 - nC VDS = 10V, I/ss = 0V
td(on) Turn-On Delay Time - 9.7 - VDD = 16V, l/ss = 4.5V ©
t, Rise Time - 40 - ID = 12A
tdom Turn-Off Delay Time - 12 - ns Clamped Inductive Load
tt Fall Time - 4.5 -
Ciss Input Capacitance - 1360 - Vss = 0V
Coss Output Capacitance - 630 - pF VDS = 10V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the B,
ISM Pulsed Source Current - - 120 integral reverse G :32“
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - 0.81 1.0 V TJ = 25°C, ls = 12A, Vas = 0V ©
trr Reverse Recovery Time - 20 30 ns T J = 25°C, IF = 12A
Qrr Reverse Recovery Charge - 12 18 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by co Mounted on minimum footprint full size board with metalized
max. junction temperature. back and with small clip heatsink.
© Starting T: = 25°C, L = 0.61 mH, (D To measured with thermal couple mounted to top (Drain) of
Rs = 259, IAS = 12A. part.
© Pulse width 3 400ps; duty cycle s: 2%. Ro is measured at To of approximately 90°C.
© Surface mounted on 1 in. square Cu board. © Click on this section to link to the appropriate technical paper.
co Used double sided cooling, mounting pad. Click on this section to link to the DirectFET Website.
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