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IRF6623-IRF6623TR1
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 95824C
International
TOR Rectifier IRF6623
q Application Specific MOSFETs HEXFET® Power MOSFET
0 Ideal for CPU Core DC-DC Converters Voss RDS(on) max Qg(typ.)
. Low Conduction Losses
q Low Switching Losses 20V 5.7mQ@1/ss = 10V 11nC
9.7mQ@VGS = 4.5V
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible
0 Compatible with Existing Surface MountTechniques
ST DirectFETm ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ISQISXIII IMQIMXIMTI I ll
Description
The IRF6623 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are
critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the
control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t20
ID © TC = 25°C Continuous Drain Current, Vss © 10V © 55
ID @ TA = 25°C Continuous Drain Current, Vss © 10V GD 16 A
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V © 13
IBM Pulsed Drain Current LO 120
PD @TC = 25°C Power Dissipation © 42
PD ©T, = 25°C Power Dissipation © 1.4 W
PD ©T, = 70°C Power Dissipation (ii) 2.1
EAS Single Pulse Avalanche Energy© 43 md
IAR Avalanche Current CD 40 A
Linear Derating Factor 0.017 W/°C
T J Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient Crhg) - 58
ROJA Junction-to-Ambient SS12.5 -
ROJA Junction-to-Ambient (Q. 20 - °C/W
Rm Junction-to-Case (DO - 3.0
Rm.ch Junction-to-PCB Mounted 1.0 -.-.-
Notes OD through are on page 2
1
12/21/05
IRF6623 International
122R Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Rrsion) Static Drain-to-Source On-Resistance - 4.4 5.7 m9 Vas = 10V, ID = 15A ©
- 7.5 9.7 Vas = 4.5V, lo = 12A ©
VGS(th) Gate Threshold Voltage 1.4 - 2.2 V Vos = Vas, ID = 250PA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, VGS = 0V
- - 150 Vos =16V,VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 34 - - S Vos = 10V, ID = 12A
Qg Total Gate Charge - 11 17
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 1.2 - nC Vas = 4.5V
di Gate-to-Drain Charge - 4.0 - ID = 12A
ngd, Gate Charge Overdrive - 2.5 - See Fig. 16
tu, Switch Charge (C)932 + di) - 5.2 -
Qoss Output Charge - 8.9 - nC Vos = 10V, Vas = 0V
tum) Turn-On Delay Time - 9.7 - VDD = 16V, Vas = 4.5V ©
t, Rise Time - 40 - ID = 12A
tom Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 4.5 -
Ciss Input Capacitance - 1360 - VGS = 0V
Cass Output Capacitance - 630 - pF VDS = 10V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 120 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - 0.81 1.0 V Tu = 25°C, ls = 12A, Vss = 0V ©
trr Reverse Recovery Time - 20 30 ns T J = 25°C, IF = 12A
0,, Reverse Recovery Charge - 12 18 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by s Used double sided cooling, mounting pad.
max. junction temperature. © Mounted on minimum footprint full size board with metalized
© Starting TJ = 25°C, L = 0.61mH, back and with small clip heatsink.
Rs = 259, IAS = 12A. © TC measured with thermal couple mounted to top (Drain) of
© Pulse width f 400ps; duty cycle S 2%. part.
GD Surface mounted on 1 in. square Cu board. Ro is measured at Tu of approximately 90°C.
2
