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IRF6622TRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 59 amperes.
PD - 97244
International IRF6622PbF
TOR Rectifier IRF6622TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHs Compliant co
o Lead-Free (Qualified up to 260°C Reflow)
o Application Specific MOSFETs
0 Ideal for CPU Core DC-DC Converters th, tot tu, 0952 Q,., tu, gs(th)
0 Low Conduction Losses 11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
0 High Cdv/dt Immunity
VDSS Vas RDS(on) RDS(on)
251/ max e2Ol max 4.9mQ@10V 6.8mg2@ 4.5V
0 Low Profile (<0.7mm) -'''s,
o Dual Sided Cooling Compatible G) l G .1" s 1 $993. h:
0 Compatible with existing Surface Mount Techniques co D = o w. “A ''
S Q DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
liimlsxlsTl IMQIMXIMTIMPI I I l
Description
The IRF6622PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that
are critical in synchronous buck converter’s ControlFET sockets.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 25 V
Vas Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V © 15
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V © 12 A
ID @ To = 25°C Continuous Drain Current, Vcs @ 10V © 59
IBM Pulsed Drain Current s 120
EAS Single Pulse Avalanche Energy © 13 md
IAR Avalanche Current S 12 A
20 I "iii.".
l I 15A 'cl,',
a D = .9,
E 15 - _o
"CC.., k >
S.. S
U) 10 5
n: N 'rs-s,., TJ = 125 C ,
E Ns. "--.-, 'r'
E 5 *9 Its.
r- T J = 25°C 9
o I I 8
3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14
VGS Gate -to -Source Voltage (V) % Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T, = 25°C, L = 0.18mH, Rs = 25Q, lAs = 12A.
1
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IRF6622PbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Ves = OV, ID = 250HA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 17 - mV/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 4.9 6.3 m9 Ves = 10V, k, = 15A ©
- 6.8 8.9 Vss = 4.5V, ID = 12A Cr)
Vegan) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Vss, ID = 25pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -5.9 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA VDS = 20V, Vas = 0V
- - 150 VDS = 20V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 55 - - S Vros = 13V, ID = 12A
Qg Total Gate Charge - 11 17
0951 Pre-Vth Gate-to-Source Charge - 2.5 - VDs = 13V
Asa Post-Vth Gate-to-Source Charge - 1.6 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 3.8 - ID = 12A
Qgodr Gate Charge Overdrive - 3.1 - See Fig. 15
st Switch Charge (0952 + di) - 5.4 -
Qoss Output Charge - 7.7 - nC Vros = 16V, Ves = 0V
Rs Gate Resistance - 1.8 3.1 Q
tam") Turn-On Delay Time - 9.4 - VDD = 13V, l/ss = 4-5V Cr)
t, Rise Time - 16 - ns ID = 12A
tam) Turn-Off Delay Time - 13 - Clamped Inductive Load
t, Fall Time - 4.6 - See Fig. 16 & 17
Ciss Input Capacitance - 1450 - Vas = 0V
Coss Output Capacitance - 380 - pF VDS = 13V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.7 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 120 integral reverse G T,
(Body Diode) © p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V To = 25°C, ls = 12A, Ves = 0V co
tr, Reverse Recovery Time - 10 15 ns TJ = 25°C, IF = 12A
Q,, Reverse Recovery Charge - 7.1 11 nC di/dt = 500A/us co See Fig. 18
Notes:
S Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width E 400ps; duty cycle s: 2%.
2
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