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IRF6621-TR1
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes.
PD - 97005A
IRF6621
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
TOR Rectifier
o RoHs Co'mpliant Containing No Lead and Bromide co Voss Vas RDS(on) Rrosion)
0 Low PrOflle (<07. mm) . 30V max t20V max 7.0mS2@ 10V 9.3mS2@ 4.5V
0 Dual Sided Cooling Compatible co
0 Ultra Low Package Inductance 09 tot tu, Asst Orr 0055 V95(th)
0 Optimized for High Frequency Switching co 11.7nC 4.2nC 1.0nC 10nC 6.9nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for Control FET application00
0 Low Conduction and Switching Losses [tiii-i-ir]
0 Compatible with existing Surface Mount Techniques co D G 3111‘s D
SQ DirectFET"' lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ail SX ST MQ MX MT MP
Description
The IRF6621 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
1hos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V © 12
ID @ TA = 70°C Continuous Drain Current, Ves © 10V © 9.6 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 55
IBM Pulsed Drain Current 6) 96
EAS Single Pulse Avalanche Energy © 13 mJ
IAR Avalanche Current s 9.6 A
25 . "ii.". 12 I l I
" ID = 12A 3, ID: 9.6A VDS= 24V
A 10 I
Ci tO = "
g 20 I-; VDS 15V 2f
A > 8 1
S k 8 'sd'''"
Cl 15 o /
n: N tr) 6 'w''''"
-i, "c.,,, T J = 125°C 5.3 4 /
g 10 8 r-'""""
r- - 2 /
T J = 25°C ".---_, U) /
Vas, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
Notes: Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
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© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting T J = 25°C, L = 0.29mH, Rs = 259, IAS = 9.6A.
10/6/05
IRF6621 International
IEZR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABI/rss/AT., Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, b = 1mA
Rroson) Static Drain-to-Source On-Resistance - 7.0 9.1 m9 l/ss = 10V, ID = 12A CD
- 9.3 12.1 l/ss = 4.5V, ID = 9.6A ©
vesuh, Gate Threshold Voltage 1.35 1.8 2.25 v VDs = Ves, ID = 250pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -5.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 24V, Vss = 0V
- - 150 VDS = 24V, I/as = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 31 - - S VDs = 15V, ID = 9.6A
q, Total Gate Charge - 11.7 17.5
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC l/ss = 4-5V
di Gate-to-Drain Charge - 4.2 - ID = 9.6A
ngd, Gate Charge Overdrive - 3.2 - See Fig. 15
st Switch Charge (0982 + di) - 5.2 -
Qoss Output Charge - 6.9 - nC VDS = 15V, I/ss = 0V
Rs Gate Resistance - 2.0 - Q
td(on) Turn-On Delay Time - 12 - VDD = 15V, I/ss = 4.5V OD
t, Rise Time - 14 - ID = 9.6A
tdoit) Turn-Off Delay Time - 16 - ns Clamped Inductive Load
t, Fall Time - 4.1 -
Ciss Input Capacitance - 1460 - Ves = 0V
Coss Output Capacitance - 310 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 96 integral reverse G E
(Body Diode) © p-n junction diode. SI
Va, Diode Forward Voltage - 0.8 1.0 v TJ = 25°C. Is = 9.6A, Vas = 0V CO
trr Reverse Recovery Time - 9.8 15 ns TJ = 25°C, IF = 9.6A
Q,, Reverse Recovery Charge - 10 15 nC di/dt = 420A/ps co
Notes:
(D Pulse width S 400ps; duty cycle S 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
2
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