IRF6619TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications.Absolute Maximum RatingsMax.Parameter Units20V Drain-to-Source Voltage VDS ±20V Gate-t ..
IRF6619TRPBF , DirectFET Power MOSFET
IRF6620 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsV 20Drain-to-Source Voltage VDSV Gate-to-S ..
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IRF6620TR1 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsV 20Drain-to-Source Voltage VDSV Gate-to-S ..
IRF6620TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
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IRF6619TR1PBF
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
PD - 97084
IRF6619PbF
lRF6619TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
ISBR Rectifier
0 RoHS Compliant C) Voss Vas RDS(on) RDS(on)
© Lead-Free (Qualified up to 260°C Reflow) 20V max t20V max 1.65mg2@ 10V 2.2mg2@ 4.5V
0 Application Specific MOSFETs
0 Ideal for CPU Core DC-DC Converters 09 tot tu, Asst Q" tu,, Vgsith)
0 Low Conduction Losses 38nC 13nC 3.5nC 18nC 22nC 2.0V
0 High Cdv/dt Immunity
0 Low Profile (<0.7mm) f s
0 Dual Sided Cooling Compatible co o 2 brit,' D
0 Compatible with existing Surface Mount Techniques co s
MX DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)C)
SQ SX ST MQ [EEK MT
Description
The IRF6619PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V O) 30
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 24 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (g) (Package Limited) 150
IDM Pulsed Drain Current 6) 240
EAS (Thermallylimited) Single Pulse Avalanche Energy © 240 mJ
|AR Avalanche Current s See Fig. 14, 15, 17a, 17b, A
EAR Repetitive Avalanche Energy co mJ
6.0 . fii" 12 l l l
ID = 30A 8, ID: 16A YDS=16Y
g 5.0 l - g 10 VDS=10V "
.".''Cs" t , 8 /
r: w "
3 4.0 S o,e,,'fr'''"
8 (s T J = 125°C C) 6 /
I 3 o N,'. , tf''"
r- 2.0 _ q 2 /""'
T J = 25°C 8
1.0 > 0
2.0 4.0 6.0 8.0 10.0 0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
N t Fig l. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
© TC measured with thermocouple mounted to top (Drain) of part.
co Repetitive rating; pulse width limited by max. junction temperature.
co Limited by TJmax, starting To = 25°C, L = 0.86mH, Rs = 259, IAS =
24A, l/ss =10V. Part not recommended for use above this value.
1
co Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
5/3/06
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IRF6619PbF
International
IEZR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V l/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 14 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 1.65 2.2 mn I/ss = 10V, ID = 30A ©
- 2.2 3.0 l/ss = 4.5V, ID = 24A ©
Vesoh) Gate Threshold Voltage 1.55 - 2.45 V l/rss = I/ss, ID = 250pA
AVGSOM/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA VDS = 16V, Vas = 0V
- - 150 VDS= 16V, VGS=OV,TJ= 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -1OO l/ss = -20V
gfs Forward Transconductance 89 - - S VDS = 10V, ID = 24A
q, Total Gate Charge - 38 57
0931 Pre-Vth Gate-to-Source Charge - 10.2 - VDS = 10V
0952 Post-Vth Gate-to-Source Charge - 3.5 - nC Ves = 4.5V
di Gate-to-Drain Charge - 13.2 - ID = 16A
ngd, Gate Charge Overdrive - 11.1 - See Fig. 18
st Switch Charge (Q952 + di) - 16.7 -
Qoss Output Charge - 22 - nC Vos = IOM, Ves = 0V
Rs Gate Resistance - - 2.3 Q
tam) Turn-On Delay Time - 21 - VDD = 16V, l/ss = 4.5V C)
t, Rise Time - 71 - ID = 24A
td(ott) Turn-Off Delay Time - 25 - ns Clamped Inductive Load
t, Fall Time - 9.3 -
Ciss Input Capacitance - 5040 - Ves = 0V
Coss Output Capacitance - 1580 - pF VDS = 10V
Crss Reverse Transfer Capacitance - 780 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current @TC=25°C - - 110 MOSFET symbol C)
(Body Diode) A showing the It
ISM Pulsed Source Current - - 240 integral reverse G (rd,
(Body Diode) S p-n junction diode. fl
Vso Diode Forward Voltage - 0.8 1.0 V TJ = 25°C, ls = 24A, Vas = 0V ©
1,, Reverse Recovery Time - 29 44 ns To = 25°C. IF = 24A
Qrr Reverse Recovery Charge - 18 27 n0 di/dt = 100A/ps ©
Notes:
S Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 5 400ps; duty cycle 3 2%.
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