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IRF6617TR1PBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes.
PD -97082
IRF6617PbF
IRF6617TFlPbF
International
1% Rectifier
o RoHS Compliant © DirectFETTM Power MOSFET
o Lead-Free (Qualified up to 260°C Reflow)
0 Application Specific MOSFETs Voss RDS(on) max Ctg(typ.)
0 Ideal for CPU Core DC-DC Converters 30V 8.1 mQ@1/ss = 10V 11nC
0 Low Conduction Losses 10.3mf2@Vss = 4.5V
0 High Cdv/dt Immunity
q Low Profile (<0.7mm)
0 Dual Sided Cooling Compatible © brii, s
0 Compatible with existing Surface MountTechniques © o Q s D
ST DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ SX (gif MO MX MT
Description
The lRF6617PbF combines the latest HEXFET© power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micr08TM and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for param-
eters that are critical in synchronous buck converters including RDS( and gate charge to minimize losses in the control FET
socket. . .
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V C5 55
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V @ 14 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V (E) 11
IBM Pulsed Drain Current (D 120
PD @TC = 25°C Power Dissipation © 42
Pp @TA = 25°C Power Dissipation © 2.1 W
PD @TA = 70°C Power Dissipation C4) 1.4
EAS Single Pulse Avalanche Energy© 27 mJ
IAR Avalanche Current C) 12 A
Linear Derating Factor 0.017 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RGJA Junction-to-Ambient C4)C9 - 58
ReJA Junction-to-Ambient ss 12.5 -
RGJA Junction-to-Ambient (Q. 20 - °C/W
ReJC Junction-to-Case ®O - 3.0
RMPCB Junction-to-PCB Mounted 1.0 -
Notes co through are on page 2
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5/3/06
IRF6617PbF International
IEZR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
ABI/oss/ATU Breakdown Voltage Temp. Coefficient - 25 - mV/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 6.2 8.1 m9 l/ss = 10V, ID = 15A ©
- 7.9 10.3 l/ss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.35 V VDS = Vesa ID = 250pA
AI/sam/ATS, Gate Threshold Voltage Coefficient --..-. -5.4 .-..-..- mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vros = 24V, l/ss = 0V
- - 150 VDS = 24V, l/ss = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 39 - - S Vos = 15V, ID = 12A
q, Total Gate Charge - 11 17
0951 Pre-l/th Gate-to-Source Charge - 3.1 - Vros = 15V
Ass, Post-Vth Gate-to-Source Charge - 1.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 4.0 - ID = 12A
ngd, Gate Charge Overdrive - 2.9 - See Fig. 16
st Switch Charge (0952 + di) - 5.0 -
Qoss Output Charge - 10 - nC l/ras = 15V, l/ss = 0V
tdon) Turn-On Delay Time - 11 - VDD = 16V, I/as = 4.5V ©
t, Rise Time - 34 - ID = 12A
td(off) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 3.7 -
Ciss Input Capacitance - 1300 - I/ss = 0V
Coss Output Capacitance - 430 - pF l/ras = 15V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the 'C-a-,,
ISM Pulsed Source Current - - 120 integral reverse G E
(Body Diode) co p-n junction diode. S
Va, Diode Forward Voltage - 0.81 1.0 V Tu = 25°C, ls = 12A, Vss = 0V ©
trr Reverse Recovery Time - 16 24 ns T J = 25°C, IF = 12A
Qrr Reverse Recovery Charge - 7.2 11 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by s Used double sided cooling, mounting pad.
max. junction temperature. co Mounted on minimum footprint full size board with metalized
© Starting T: = 25°C, L = 0.40mH, back and with small clip heatsink.
Rs = 259, IAS = 12A. © TC measured with thermal couple mounted to top (Drain) of part.
© Pulse width 5 400ps; duty cycle S 2%. Re is measured at TJ of approximately 90°C.
© Surface mounted on 1 in. square Cu board. © Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
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