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IRF6613
HEXFET Power MOSFET
PD - 95881
lRF6613
HEXFET® Power MOSFET
RDS(on) max Clg(typ.)
3.4mf2@Vss = 10V 42nC
4.1 mQ©Vas = 4.5V
International
TOR Rectifier
0 Application Specific MOSFETs
0 Ideal for Synchronous Rectification in Isolated Voss
DC-DC Converters 40V
. Low Conduction Losses
0 Low Switching Losses
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible
0 Compatible with existing Surface Mount Techniques
MT DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ISOISXISTI IMQIMXIII I ll
Description
The IRF6613 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETrM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or Convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 40 V
Vss Gate-to-Source Voltage t20
ID © TC = 25°C Continuous Drain Current, Vss © 10V 150
ID © T, = 25°C Continuous Drain Current, Vss © 10V 23 A
ID © TA = 70°C Continuous Drain Current, l/ss @ 10V 18
IBM Pulsed Drain Current Cl) 180
PD @TC = 25°C Power Dissipation 89
PD @TA = 25°C Power Dissipation s 2.8
PD @TA = 70°C Power Dissipation s 1.8 W
EAS Single Pulse Avalanche Energy© 200 mJ
IAR Avalanche Current OD 18 A
Linear Derating Factor © 0.022 W/°C
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Ambient @O
Junction-to-Ambient SO)
Junction-to-Ambient 6)(8)
Junction-to-Case ©©
Junction-to-PCB Mounted
Notes (O through are on page 2
8/18/04
IRF6613
International
122R Rectifier
Static tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 38 - mV/°C Reference to 25°C, ID = 1mA
F1030") Static Drain-to-Source On-Resistance - 2.6 3.4 mf2 Vss = 10V, ID = 23A ©
- 3.1 4.1 Vss = 4.5V, ID =18A ©
VGsnh) Gate Threshold Voltage 1.35 - 2.25 V Vos = Vss, ID = 250PA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 32V, I/ss = 0V
- - 150 Vos = 32V, l/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 93 - - S Vos = 15V, ID = 18A
a,, Total Gate Charge - 42 63
0951 Pre-i/th Gate-to-Source Charge - 11.5 - Vos = 20V
0932 Post-Vth Gate-to-Source Charge - 3.3 - nC Vas = 4.5V
di Gate-to-Drain Charge - 12.6 - b = 18A
ngd, Gate Charge Overdrive - 14.6 - See Fig. 6 and 16
st Switch Charge (0952 + di) - 15.9 -
Qoss Output Charge - 22 - nC Vos = 16V, l/ss = 0V
tum Turn-On Delay Time - 18 - vDD = 16V, Vas = 4.5V ©
tr Rise Time - 47 - b = 18A
tum) Turn-Off Delay Time - 27 - ns Clamped Inductive Load
t, Fall Time - 4.9 -
Ciss Input Capacitance - 5950 - Vas = 0V
cu, Output Capacitance - 990 - pF l/rs = 15V
Crss Reverse Transfer Capacitance - 460 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions .0
ls Continuous Source Current - - 3.5 MOSFET symbol
(Body Diode) A showing the G
ISM Pulsed Source Current - - 180 integral reverse 5
(Body Diode) co p-n junction diode.
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 18A, Vas = 0V ©
tr, Reverse Recovery Time - 38 57 ns T J = 25°C, V = 18A
Q,, Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps ©
Notes:
CD Repetitive rating; pulse width limited by s
max. junction temperature. ©
© Starting To = 25°C, L =1.2mH,
Rs = 259, IAS =18A. ©
© Pulse width s: 400ps; duty cycle I 2%.
© Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Tc measured with thermal couple mounted to top (Drain) of
Ro is measured at To of approximately 90°C.
