IRF6611TR1 ,Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 30Drain-to-Source Voltage VDS ±20V Gate- ..
IRF6612 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipmentand vapor phase, infra-red or convection soldering techniques, ..
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IRF6613TR1PBF ,A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 40Drain-to-Source Voltage VDSGate-to-Sou ..
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IRF6611TR1
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
PD - 96978E
iRF6611
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
Tait, Rectifier
o RoHS compliant containing no lead or bromide C) V V R R
q Low Profile (
q Dual Sided Cooling Compatible C) 30V max t20V max 2.0mS2@ 10V 2.6mQ@ 4.5V
qt Ultra Low Package Inductance fl; tot 09L 0952 On Qoss 1lsssom
q Optimized for High Frequency Switching above 1MHz C) 37nC 12nC 3.3nC 16nC 23nC 1.7V
q Ideal for CPU Core DC-DC Converters
0 Optimized for SyncFET Socket of Sync. Buck ConVerterC0 1+1
q Low Conduction Losses 1
0 Compatible with Existing Surface Mount Techniques co D
DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)0D
lsalsxlsrl IMQIMIMTI I ll
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R and high Cdv/
. . DS(on , . . DS(on)
dt immunity for synchronous FEET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
V s Gate-to-Source Voltage t20
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V © 32
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 26 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 150
IDM Pulsed Drain Current © 220
EAS Single Pulse Avalanche Energy © 310 m]
IAR Avalanche Current © 22 A
20 . . fir" 6.0
I = 27A 0 I = 22A
A D 8 5.0 -'p='i'' v = 24v\
a -. DS 'pi''"
g 15 , IGS-- 15v\
g 10 g 3.0 Ar"
I tr F
g T J = 125°C 5.3 2.0 A
- 5 P,
g 8 1 o "
F- o .
W5 C (l) /
0 > 0.0
0 1 2 3 4 5 6 7 8 9 10 o 10 20 30 40 50
VGS Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. CO Starting Tu = 25°C, L = 0.91 mH, Rs = 259, IAS = 22A.
CD Click on this section to link to the DirectFET MOSFETs. © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © Tc measured with thermocouple mounted to top (Drain) of part.
1
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IRF6611 International
Tcm Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/tss = 0V, lo = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 23 -- mV/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 2.0 2.6 m9 Vas = 10V, ID = 27A s
- 2.6 3.4 Ves = 4.5V, ID = 22A ©
V330,.) Gate Threshold Voltage 1.35 - 2.25 V I/os = kss, ID = 250PA
AVGSOh/ATJ Gate Threshold Voltage Coefficient - -6.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDs = 24V, Ves = 0V
- - 150 VDS = 24V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 100 - - S VDS = 15V, b = 22A
Q, Total Gate Charge - 37 56
0951 Pre-Vth Gate-to-Source Charge - 9.8 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 3.3 - nC Vss = 4.5V
di Gate-to-Drain Charge - 12.5 ID = 22A
ngdr Gate Charge Overdrive - 11.4 - See Fig. 15
QSW Switch Charge (0932 + di) - 15.8 -
Qoss Output Charge - 23 - nC I/rs = 16V, Ves = 0V
Rs Gate Resistance - - 2.3 Q
tdmn) Turn-On Delay Time - 18 - VDD = 16V, l/tss = 4.5V s
t, Rise Time - 57 - ID = 22A
tdwm Turn-Off Delay Time - 24 - ns Clamped Inductive Load
t, Fall Time - 6.5 -
Ciss Input Capacitance - 4860 - Vas = 0V
Cogs Output Capacitance - 1030 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 480 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 110 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 220 integral reverse G E
(Body Diode) © p-n junction diode. cl
I/s, Diode Forward Voltage - - 1.0 V TJ = 25°C. ls = 22A, l/ss = 0V @
t" Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 22A
0,, Reverse Recovery Charge - 16 24 no di/dt = 100A/ps S
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
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