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IRF6609TR1PBF-IRF6609TRPBF
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.
International
TOR, Rectifier
o RoHS Compliant co
PD -97091A
llRF6609PbF
IFlF6609TRPbF
DirectFETTM Power MOSFET ©
o Lead-Free (Qualified up to 260°C Reflow) VDSS Rosmn) max 09
o Application Specific MOSFETs 20V 2_0mg@vGS = 10V 46nC
o Ideal for CPU Core DC-DC Converters 2.6mQ@Vss = 4.5V
o Low Conduction Losses and Switching Losses
o High Cdv/dt Immunity
o Low Profile (
0 Dual Sided Cooling Compatible C) - S D
ct Compatible with existing Surface MountTechniques C)
MT DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
- SQ SX ST MQ MX
Description
The IRF6609PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 20 V
l/ss Gate-to-Source Voltage :20
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V © 150
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V CO 31 A
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V © 25
IBM Pulsed Drain Current Cs) 250
Pro @Tc = 25°C Power Dissipation © 89
Pro @TA = 25°C Power Dissipation © 1.8 W
Pro @TA = 70°C Power Dissipation © 2.8
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Ambient coco) - 45
ReJA Junction-to-Ambient @0125 -
Fu, Junction-to-Ambient 20 - oC/W
ReJC Junction-to-Case ©& - 1.4
ReJ-PCB Junction-to-PCB Mounted 1.0 -
Notes co through are on page 10
1
7/3/06
IRF6609PbF International
Static tii) Tu = 25°C (unless otherwise specified) TOR 1ectiher
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 1.6 2.0 m9 l/ss = 10V, ID = 31A (9
- 2.0 2.6 Vss = 4.5V, ID = 25A ©
VGSM Gate Threshold Voltage 1.55 -- 2.45 V VDS = Vas, ID = 250pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 pA Vos = 16V, I/ss = 0V
- - 150 VDS = 16V, l/ss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 91 - - S Vos = 10V, ID = 25A
q, Total Gate Charge - 46 69
0931 Pre-Vth Gate-to-Source Charge - 15 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge -- 4.7 -- nC VGS = 4.5V
di Gate-to-Drain Charge - 15 - ID = 17A
ngd, Gate Charge Overdrive -- 11 -.- See Fig. 16
st Switch Charge (0952 + di) - 20 -
Qoss Output Charge - 26 - nC Vos = 10V, l/ss = 0V
td(on) Turn-On Delay Time - 24 - VDD = 16V, l/ss = 4.5V s
t, Rise Time - 95 - ID = 25A
tdoft) Turn-Off Delay Time - 26 - ns Clamped Inductive Load
t, Fall Time - 9.8 -
Ciss Input Capacitance -- 6290 -- VGS = 0V
Coss Output Capacitance - 1850 - pF VDS = 10V
Crss Reverse Transfer Capacitance -.- 860 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS (Thermallylimited Single Pulse Avalanche Energy © -- 240 mJ
IAR Avalanche Current © - See Fig. 12, 13, 18a, A
E AR Repetitive Avalanche Energy © - 18b, mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 250 integral reverse G E
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - 0.80 1.2 V TJ = 25°C, IS = 25A, VGS = 0V (S)
trr Reverse Recovery Time - 32 48 ns TJ = 25°C, IF = 25A
Q,, Reverse Recovery Charge - 26 39 nC di/dt = 100A/ps S
2
