IRF6609TR1 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 20 VDSV ±20Gate- ..
IRF6609TR1 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
IRF6609TR1PBF ,A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 20 VDSV Gate-to- ..
IRF6609TRPBF ,A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6611TR1 ,Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 30Drain-to-Source Voltage VDS ±20V Gate- ..
IRF6612 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipmentand vapor phase, infra-red or convection soldering techniques, ..
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IRF6609-IRF6609TR1
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 95822B
International IIRF6609
IQER Rectifier HEXFET© Power MOSFET
Voss RDS(on) max Clg
20V 2.0mg2@Vss = 10V 46nC
o Low Conduction Losses
o Low Switching Losses
o Ideal Synchronous Rectifier MOSFET 2.6mg2@1/ss = 4-5V
o Low Profile (<0.7 mm) _ 1
o Dual Sided Cooling Compatible s I
0 Compatible with existing Surface Mount D G b-Lie) - 0
Techniques s _
MT V DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST MQ MX
Description
The IRF6609 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
I/tss Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V C) 150
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6) 31 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V CE) 25
IDM Pulsed Drain Current C) 250
PD @Tc = 25°C Power Dissipation © 89
PD @TA = 25°C Power Dissipation © 1.8 W
PD @TA = 70°C Power Dissipation © 2.8
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RGJA Junction-to-Ambient (ii)(3) - 45
ReJA Junction-to-Ambient ©0125 -
RGJA Junction-to-Ambient (Q. 20 - °C/W
ReJC Junction-to-Case (DO - 1.4
RMPCB Junction-to-PCB Mounted 1.0 -
Notes C) through are on page 10
1
10/05/05
RF6609 International
Static (ii) Tu = 25°C (unless otherwise specified) TOR 1ectiher
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 -- -- V I/ss = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 1.6 2.0 m9 I/ss = 10V, ID = 31A ©
- 2.0 2.6 I/ss = 4.5V, ID = 25A ©
VGS(th) Gate Threshold Voltage 1.55 - 2.45 V VDS = VGS, ID = 250pA
AI/som/ATU Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 16V, Ves = 0V
- - 150 l/DS =16V,VGs = ov, T, = 150°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage -- -- -100 I/ss = -20V
gfs Forward Transconductance 91 - - S l/os = 10V, ID = 25A
q, Total Gate Charge - 46 69
C2931 Pre-Vth Gate-to-Source Charge - 15 - I/os = 10V
0952 Post-Vth Gate-to-Source Charge - 4.7 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 15 - ID = 17A
ngd, Gate Charge Overdrive - 11 - See Fig. 16
th,, Switch Charge (0952 + di) - 20 -
Qoss Output Charge - 26 - nC l/ns = 10V, l/ss = 0V
ton) Turn-On Delay Time -.- 24 -- VDD = 16V, l/ss = 4.5V ©
t, Rise Time - 95 - ID = 25A
td(ott) Turn-Off Delay Time - 26 - ns Clamped Inductive Load
t, Fall Time - 9.8 -
Ciss Input Capacitance - 6290 - l/ss = 0V
Coss Output Capacitance - 1850 - pF 1/ros = 10V
Crss Reverse Transfer Capacitance - 860 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS (Thermallylimited Single Pulse Avalanche Energy © - 240 mJ
IAR Avalanche Current (D - See Fig. 12, 13, 18a, A
E AR Repetitive Avalanche Energy co - 18b, mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 250 integral reverse G E
(Body Diode) C) p-n junction diode. S
Vsp Diode Forward Voltage -- 0.80 1.2 V Tu = 25°C, ls = 25A, I/tss = 0V ©
trr Reverse Recovery Time - 32 48 ns T J = 25°C, IF = 25A
Q,, Reverse Recovery Charge - 26 39 nC di/dt = 100A/ps ©
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