IRF6607TR1 ,Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6608 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6609 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET package IRF6609HEXFET Power MOSFETV R maxQgDSS DS(on) Low Conduction Losses20V 2.0mΩ@V = 10V ..
IRF6609 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 20 VDSV ±20Gate- ..
IRF6609TR1 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 20 VDSV ±20Gate- ..
IRF6609TR1 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
IS63LV1024L , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10JI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10KLI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10TI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12B , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IRF6607TR1
Power MOSFET
PD - 94574B
IRF6607
HEXFET® Power MOSFET
RDS(on) max Ctg(typ.)
3.3mQ@VGS = 10V 50nC
4.4mQ@VGS = 4.5V
International
TOR. Rectifier
q Application Specific MOSFETs
0 Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses
0 High Cdv/dt Immunity
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible
. Compatible with existing Surface
Mount Techniques
DirectFET” ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
ISQISXISTI IMQIMXIII I I I I
Description
The IRF6607 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdvldt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage :12
ID © TC = 25°C Continuous Drain Current, VGS @ 10V 94
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 27 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 22
IBM Pulsed Drain Current C) 220
PD @TA = 25°C Power Dissipation s 3.6
PD @TA = 70°C Power Dissipation s 2.3 W
Pro @Tc = 25°C Power Dissipation 42
Linear Derating Factor 0.029 W/''C
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RNA Junction-to-Ambient (ii)(8) - 35
Ram Junction-to-Ambient SS 12.5 -
ROJA Junction-to-Ambient (9. 20 - °C/W
Roc Junction-to-Case ©© - 3.0
Rorracs Junction-to-PCB Mounted - 1.0
Notes OD through are on page 11
1
4/8/04
IRF6607 International
IEER Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
ABN/oss/AT: Breakdown Voltage Temp. Coemcient - 29 - mV/°C Reference to 25°C, b = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.5 3.3 mn I/ss = 10V, ID = 25A S
- 3.4 4.4 Vss = 4.5V, ID = 20A ©
Vegan) Gate Threshold Voltage 1.3 - 2.0 V I/os = VGS, ID = 250PA
AVGS(1h)/ATJ Gate Threshold Voltage Coemcient - -5.3 - mV/°C
Koss Drain-to-Source Leakage Current - - 30 pA Vos = 24V, VGS = 0V
- - 50 HA I/os = 30V, I/ss = OV
- - 100 I/os = 24V, Vss = OV, T, = 70°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
gfs Forward Transconductance 120 - - S Vos = 15V, ID = 20A
Q, Total Gate Charge -- 5O 75
Qgs1 Pre-Vth Gate-to-Source Charge - 13 - Vos = 15V
Asst Post-Vth Gate-to-Source Charge - 4.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 16 - ID = 20A
ngdr Gate Charge Overdrive - 18 - See Fig. 16
st Switch Charge (0952 + di) - 20 -
Qoss Output Charge - 30 - nC Vos = 16V, Vss = OV
Re Gate Resistance - 0.6 1.9 Q
td(0n) Turn-On Delay Time - 60 - Va, = 15V, VGs = 4.5V 6)
t, Rise Time - 8.0 - ID = 20A
td(ott) Turn-Off Delay Time .-- 32 - ns Clamped Inductive Load
t, Fall Time - 13 -
Ciss Input Capacitance - 6930 - VGS = ov
Coss Output Capacitance - 1260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 510 - f = 1.0MHz
Avalanche Characteristics
Parameter Max.
EAS ng se va nergy 51
IAR 20
EAR 0.36
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 27 MOSFET symbol a
(Body Diode) A showing the
G, Pulsed Source Current - - 220 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 1.0 1.3 v T J = 25°C, ls = 20A, VGS = OV ©
trr Reverse Recovery Time - 46 69 ns T J = 25°C, IF = 20A
er Reverse Recovery Charge - 54 81 nC di/dt = 100A/ps ©
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