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IRF6604
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
International
Tait Rectifier
0 Application Specific MOSFETs
q Ideal for CPU Core DC-DC Converters
0 Low Conduction Losses
0 Low Switching Losses
0 Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible
0 Compatible with existing Surface Mount
Techniques
Description
PD - 9436513
IRF6604
HEXFET© Power MOSFET
VDss RDS(on) max 09
30V 11.5m§2@VGS = 7.0V 17nC
13mf2@Vss = 4.5V
DirectFETm iSOMETRIC
The IRF6604 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 112
ko @ TC = 25''C Continuous Drain Current, VGS @ 7.0V 49
ID @ TA = 25°C Continuous Drain Current, VGS @ 7.0V 12 A
ID @ TA = 70°C Continuous Drain Current, I/ss @ 7.0V 9.2
IDM Pulsed Drain Current (D 92
Po @r, = 25°C Power Dissipation © 2.3
Po @TA = 70°C Power Dissipation © 1.5 W
PD @Tc = 25°C Power Dissipation 42
Linear Derating Factor 0.018 W/°C
To Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
ROJ-PCB
Notes O)
Parameter
Junction-to-PCB Mounted
through © are on page 11
6/11/03
International
IRF6604
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABN/oss/AT, Breakdown Voltage Temp. Coemcient - 27 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 9.0 11.5 mn I/ss = 7.0V, ID = 12A ©
- 1O 13 Vss = 4.5V, ID = 9.6A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = N/ss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -4.5 - mV/°C
loss Drain-to-Source Leakage Current - - 3O pA Vos = 24V, Vss = 0V
- - 100 Vros = 24V, N/ss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
gfs Forward Transconductance 38 - - S VDS = 15V, ID = 9.6A
q, Total Gate Charge - 17 26
Qgs1 Pre-Vth Gate-to-Source Charge - 4.1 - Vos = 15V
Qg52 Post-Vth Gate-to-Source Charge - 1.0 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 6.3 - ID = 9.6A
ngdr Gate Charge Overdrive - 5.6 --- See Fig. 16
st Switch Charge (Q95; + di) - 7.3 -
Qoss Output Charge - 9.5 - nC I/ns = 16V, VGS = 0V
tam) Turn-On Delay Time - 11 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 4.3 - ID = 9.6A
tdwm Turn-Off Delay Time - 18 - ns Clamped Inductive Load
tr Fall Time - 25 -
Cs, Input Capacitance - 2270 - I/ss = 0V
Coss Output Capacitance - 420 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz
Avalanche Characteristics
Parameter Max.
EAS ng e n rgy 32
IAR rrent 9.6
E AR Repetitive Avalanche Energy 0.23
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 12 MOSFET symbol D
(Body Diode) A showing the
lsm Pulsed Source Current - - 92 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - 0.94 1.2 V TJ = 25°C, Is = 9.6A, VGS = 0V ©
tn Reverse Recovery Time - 31 47 ns TJ = 25°C, IF = 9.6A
er Reverse Recovery Charge - 26 39 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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