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IRF644S-IRF644SPBF-IRF644STRL
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD-9.1006
' Inet,tygli..tjyitl
ISQR Rectifier IFlF644S
HEXFET® Power MOSFET
o Surface Mount
o Available in Tape & Reel
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
. Ease of Paralleling
o Simple Drive Requirements
RDS(on) = 0.289
ID=14A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. it provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
Io @ Tc = 25°C Continuous Drain Current, Vas @ 10 V 14
lo @ Tc = 100°C Continuous Drain Current, Ves © 10 V 8.5 A
IDM Pulsed Drain Current (D _ 56
Pro © To = 25°C Power Dissipation T 125 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 1.0 WPC
Linear Derating Factor (PCB Mount)" 0.025
Vas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Ct 550 mJ
lAn Avalanche Current 6) 14 A
EAR Repetitive Avalanche Energy (D 13 mJ
dv/dt Peak Diode Recovery dv/dt co 4.8 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 . a C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min, T Typ. Max. Units
Rmc Junction-to-Case - - 1.0
Ram Junction-to-Ambient (PCB mount)" _ - - 40 °C/W
Ram Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
lRF644S 1:212
Electrical Characteristics tii! Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions 1
V(emoss Drain-to-Source Breakdown Voltage 250 - - V Vss=0V, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.34 - V/°C Reference to 25°C, 19: 1mA
Roam) Static Drain-to-Source On-Resistance -- - 0.28 n Ves=10V, Io=8.4A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 250pA
gts Forward Transconductance 6.7 - - S VDs=50V, Irr=8.4A G)
loss Drain-to-Source Leakage Current - - 25 WA VDS=250V' VGS=0V
- - 250 Vns=200V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 68 lo=7.9A
Qgs Gate-to-Source Charge - - 11 . nC Vos=200V
di Gate-to-Drain ('Niller") Charge - - 35 VGs=1OV See Fig. 6 and 13 ©
fawn) Turn-On Delay Time - 11 - Voo=125V
t, Rise Time - 24 - ns lo=7.9A
tum) Turn-Off Delay Time - 53 - RG=9Aft
tt Fall Time - 49 - HD=8.7Q. See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - t 6:31:31. ste. ') (ii)
nH from package G
Ls Internal Source Inductance -- 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 1300 - VGs=0V
Cass Output Capacitance - 330 - pF Vos= 25V
I Cyss Reverse Transfer Capacitance - 85 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 14 MOSFET symbol D _
(Body Diode) A showing the F71)
ISM Pulsed Source Current - - 56 integral reverse G (II-l
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=14A, VGs=0V ©
trr Reverse Recovery Time - 250 500 ns TJ=25°C, 1r=7SA
G, Reverse Recovery Charge - 2.3 4.6 PC di/dt=100A/ws ©
ton Forward Tum-On Time Intrinsic turn-on lime is neglegible (turn-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
co VDD=50V, starting TJ=25°C, L=4.5mH
Re=25$2, lAs=14A (See Figure 12)
C3) Isos14A, di/dts150A/us. VDDSV(BR)DSSV
TJS150°C
© Pulse widths 300 us; duty cycle 32%.
