IRF644N ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance and2 ..
IRF644NL ,250V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 94107IRF644NIRF644NS Advanced Process TechnologyIRF644NL Dynamic dv/dt Rating ®HEXFET Power ..
IRF644NS ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF644PBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
I912 Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Av ..
IRF644S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF644SPBF ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package' International
TOR Rectifier
HEXFETar Power MOSFET
q Surface Mount
q Available in Tape & ..
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IS63LV1024-12J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12JI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IRF644N-IRF644NL-IRF644NS
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Description
Fifth Generation HEXFET© Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely emcient and reliable device tor use in a wide
variety of applications.
PD - 94107
IRF644N
IRF644NS
IRF644NL
HEXFET6 Power MOSFET
VDSS = 250V
A RDS(on) = 240m§2
ID = 14A
_'. .>
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide TO-220AB D2Pak TO-262
acceptance throughout the industry. IRF644N IRF644NS IRF644NL
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
lo @ TC = 25°C Continuous Drain Current, VGs @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 9.9 A
IDM Pulsed Drain Current C) 56
Pro @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/''C
VGS Gate-to-Source Voltage , 20 V
EAs Single Pulse Avalanche Energy© 180© mJ
IAR Avalanche Currenk0 8.4 A
EAR Repetitive Avalanche Energy03 15 mJ
dv/dt Peak Diode Recovery dv/dt © 7.9 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO lbf-in (1 .1N-m)
1
3/15/01
IRF644N/644NS/644NL
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - -- V VGs = 0V, ID = 250pA
AV(BR)DS$/ATJ Breakdown Voltage Temp. Coemcient - 0.33 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 240 mn VGS = 10V, ID = 8.4A G)
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGs, lo = 250PA
9ts Forward Transconductance 8.8 - - S Vos = 50V, ID = 8.4A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 250V, VGS = 0V
- - 250 Vos = 200V, I/ss = OV, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 54 ID = 8.4A
Qgs Gate-to-Source Charge - - 9.2 nC Vros = 200V
di Gate-to-Drain ("Miller") Charge - - 26 I/ss = 10V, See Fig. 6 and 13
tum) Turn-On Delay Time - 10 - VDD = 125V
tr Rise Time - 21 - ns ID = 8.4A
tam) Turn-Off Delay Time - 30 - Rs = 6.29
tf Fall Time - 17 - VGS = 10V, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 1060 - Vss = 0V
Coss Output Capacitance - 140 - Vos = 25V
Crss Reverse Transfer Capacitance - 38 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C) - - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 14A, VGS = 0V co
tn Reverse Recovery Time - 165 250 ns To = 25°C, IF = 14A
Qrr Reverse Recovery Charge - 1.0 1.6 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient® - 62
ReJA Junction-to-Ambient (PCB mount)" - 4O
2
