IRF644 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 14A, 250V, R = 0.28Ω @V = 10 VDS(on) ..
IRF644A , Advanced Power MOSFET
IRF644A , Advanced Power MOSFET
IRF644A , Advanced Power MOSFET
IRF644B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 14A, 250V, R = 0.28Ω @V = 10 VDS(on) ..
IRF644B ,250V N-Channel MOSFETIRF644B/IRFS644BNovember 2001IRF644B/IRFS644B250V N-Channel MOSFET
IS62WV6416BLL-55TI , 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS63LV1024-10J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10JI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IRF644
250V N-Channel MOSFET
IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 250V, R = 0.28Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF644B IRFS644B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 14 14 * A D C - Continuous (T = 100°C) 8.9 8.9 * A C I (Note 1) Drain Current - Pulsed 56 56 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 480 mJ AS I Avalanche Current (Note 1) 14 A AR E (Note 1) Repetitive Avalanche Energy 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 139 43 W D C - Derate above 25°C 1.11 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF644B IRFS644B Units R Thermal Resistance, Junction-to-Case Max. 0.9 2.89 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
