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IRF640NSTR
N-channel power MOSFET for fast switching applications, 200V, 18A
PD - 94006
International
" . . IRF640N
TOR, Rectifier IRF640NS
IRF640NL
o Advanced Process Technology HEXFET6 Power MOSFET
0 Dynamic dv/dtRating
q 175°C Operating Temperature D -
o Fast Switching VDSS - 200V
o Fully Avalanche Rated
0 Ease of Paralleling ' A RDS(on) = 0.15Q
o Simple Drive Requirements G
Description ID = 18A
Fifth Generation HEXFET© Power MOSFETs from s
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all h 1t'6iiir 1
commerciaI-industrialapplicationsatpowerdissipationlevels "strip, _ Cf
to approximately 50 watts. The low thermal resistance and _ cs-s,),, "x,
low package cost of the TO-220 contribute to its wide NF'
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the TO-220AB D2Pak TO-262
highest power capability and the lowest possible on- IRF640N IRF640NS IRF640NL
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
git%tiiihahihximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 18
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current co 72
Po @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/''C
VGS Gate-to-Source Voltage l 20 V
EAs Single Pulse Avalanche Energy© 247 md
IAR Avalanche CurrentC) 18 A
EAR Repetitive Avalanche Energy© 15 m]
dv/dt Peak Diode Recovery dv/dt © 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© 10 Ibf-in (1.1N-m)
1
10/09/00
IRF640N/S/L International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250PA
AvungSS/ATJ Breakdown Voltage Temp. Coemcient - 0.25 - Vl°C Reference to 25°C, ID = 1mA
Rosam) Static Drain-to-Source On-Resistance ..-- - 0.15 n Vcs = 10V, ID = 11A ©
VGSah) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 6.8 - - S Vos = 50V, ID = 11A ©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 Vros = 160V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 67 ID = 11A
095 Gate-to-Source Charge - - 11 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - - 33 N/ss = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 10 - VDD = 100V
tr Rise Time - 19 - ns ID = 11A
tum) Turn-Off Delay Time - 23 - Rs = 2.59
tf Fall Time - 5.5 - Ro = 9.09, See Fig. 10 ©
. Between lead,
Lo Internal Drain Inductance - 4.5 - .
nH 6mm (0.25m.)
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact
Ciss Input Capacitance - 1160 - VGs = 0V
Coss Output Capacitance - 185 - Vos = 25V
Crss Reverse Transfer Capacitance - 53 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 72 integral reverse (3
(Body Diode)00 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 11A, VGs = 0V ©
trr Reverse Recovery Time - 167 251 ns T J = 25°C, IF = 11A
G, Reverse Recovery Charge - 929 1394 nC di/dt = 100Alps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - "C/W
RQJA Junction-to-Ambient) - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
2
