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IRF640N -IRF640NL-IRF640NLPBF-IRF640NPBF-IRF640NS-IRF640NS.-IRF640NSPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94006A
International
. . IRF640N
TOR. Rectifier IRF640NS
q Advanced Process Technology © IRF640NL
. Dynamic dv/dt Rating HEXFET Power MOSFET
q 175°C Operating Temperature D
q Fast Switching VDSS = 200V
0 Fully Avalanche Rated
q Ease of 1aralPing. rn RDS(on) = 0.15Q
0 Simple Drive Requirements G
Description
Fifth Generation HEXFET® Power MOSFETs from ID = 18A
International Rectifier utilize advanced processing s
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all Pr
commerciaI-industrialapplications atpowerdissipationlevels " 'itiiit) 1/ Igiitt
to approximately 50 watts. The low thermal resistance and "t "ci6i'j(i-", Rlsrt) 's.
low package cost of the TO-220 contribute to its wide _ "rs, T Vt _ \,_\-..
acceptance throughout the industry. "tti' t L .
The D2Pak is a surface mount power package capable of .
accommodatin die sizes u to HEX-4. It rovides the
highest power9 capability aEd the lowest gossible on- TO-220AB D2Pak TO-262
resistance in any existing surface mount package. The IRF640N IRF640NS IRF640NL
D2Pak is suitable tor high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
prome application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current C) 72
PD @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 247 mJ
IAR Avalanche Current© 18 A
EAR Repetitive Avalanche Energy© 15 m]
dv/dt Peak Diode Recovery dv/dt © 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© 10 Ibf-in (1.1N-m)
1
10/08/04
IRF640N/S/L International
IEER Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient .-..-.- 0.25 -.-. V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.15 Q VGS = 10V, ID = 11A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250PA
grs Forward Transconductance 6.8 - - S Vros = 50V, ID = 11A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, VGS = 0V
- - 250 Vos = 160V, I/cs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 67 lo = 11A
095 Gate-to-Source Charge - - 11 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 33 VGS = 10V, See Fig. 6 and 13
tam) Turn-On Delay Time - 10 - VDD = 100V
tr Rise Time - 19 - ID = 11A
td(ott) Turn-Off Delay Time - 23 - ns RG = 2.59
tf Fall Time - 5.5 - Ro = 9.09, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1160 - VGS = 0V
Coss Output Capacitance - 185 - Vos = 25V
Crss Reverse Transfer Capacitance - 53 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 72 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 11A, VGS = 0V ©
trr Reverse Recovery Time - 167 251 ns TJ = 25°C, IF = 11A
Qrr Reverse Recovery Charge - 929 1394 nC di/dt = 100Alps G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface 69 0.50 - °C/W
ReJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
2
