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Partno	Mfg	Dc	Qty	Available	Descript
IRF640FP		N/a	2	avai	N-CHANNEL 200V
IRF640FP	ST	N/a	100	avai	N-CHANNEL 200V

IRF640FP ,N-CHANNEL 200VIRF640IRF640FP®N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS ..
IRF640FP ,N-CHANNEL 200VIRF640IRF640FP®N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS ..
IRF640LPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a ty ..
IRF640N ,N-Channel Power MOSFETs 200V, 18A, 0.15-Ohmapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF640NL ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 94006AIRF640NIRF640NSIRF640NL Advanced Process Technology®HEXFET Power MOSFET Dynamic dv/dt ..
IRF640NLPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance andl ..
IS62WV5128BLL-55H , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55T2I , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55T2LI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55TI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55TI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45BI , 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IRF640FP
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
IRF640
IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP
MESH OVERLAY MOSFET TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
October 1999
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 18A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRF640/FP
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
IRF640/FP
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Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
IRF640/FP
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Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
IRF640/FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
IRF640/FP
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