IRF640B ,200V N-Channel MOSFETIRF640B/IRFS640BNovember 2001IRF640B/IRFS640B200V N-Channel MOSFET
IRF640FP ,N-CHANNEL 200VIRF640IRF640FP®N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS ..
IRF640FP ,N-CHANNEL 200VIRF640IRF640FP®N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS ..
IRF640LPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a ty ..
IRF640N ,N-Channel Power MOSFETs 200V, 18A, 0.15-Ohmapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF640NL ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 94006AIRF640NIRF640NSIRF640NL Advanced Process Technology®HEXFET Power MOSFET Dynamic dv/dt ..
IS62WV5128BLL-55H , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55T2I , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55T2LI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55TI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL-55TI , 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45BI , 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF640B
200V N-Channel MOSFET
IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, R = 0.18Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF640B IRFS640B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 18 18 * A D C - Continuous (T = 100°C) 11.4 11.4 * A C I (Note 1) Drain Current - Pulsed 72 72 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 250 mJ AS I Avalanche Current (Note 1) 18 A AR E (Note 1) Repetitive Avalanche Energy 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 139 43 W D C - Derate above 25°C 1.11 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF640B IRFS640B Units R Thermal Resistance, Junction-to-Case 0.9 2.89 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
