IRF634A ,Advanced Power MOSFETIRF634A$GYDQFHG 3RZHU 026)(7
IRF634B ,250V N-Channel MOSFETIRF634B/IRFS634BNovember 2001IRF634B/IRFS634B250V N-Channel MOSFET
IRF634N ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications because of its low internal connection IRF634NS IRF634NLresistance and can dissipate u ..
IRF634NS ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94310IRF634NIRF634NSIRF634NLl Advanced Process Technology®l Dynamic dv/dt Rating HEXFET Power ..
IRF634PBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET<) Power MOSFET
. Dynamic dv/dt Rating
Repetitive Ava ..
IRF634S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IS62WV25616BLL-55BLI , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV2568BLL-55HI , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568BLL-55TI , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF634-IRF634A
Advanced Power MOSFET
IRF634A♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10μA (Max.) @ VDS = 250V
♦ Lower RDS(ON): 0.327Ω (Typ.)
$GYDQFHG3RZHU026)(7
Thermal Resistance
FEATURES
Absolute Maximum Ratings©1999
Rev. B
