IRF630NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF630NS ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance andl ..
IRF630NS ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF630NSPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF630NSTRL ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94005BIRF630NIRF630NSIRF630NL Advanced Process Technology® Dynamic dv/dt RatingHEXFET Power ..
IRF630NSTRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
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IRF630N..-IRF630NPBF-IRF630NS-IRF630NSPBF-IRF630NSTRL-IRF630NSTRR
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR. Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
PD - 94005B
IRF630N
IRF630NS
IRF630NL
HEXFET© Power MOSFET
VDSS = 200V
A RDS(on) = 0.309
ID = 9.3A
highest power capability and the lowest possible on- TO-220AB D2Pak TO-262
resistance in any existing surface mount package. The IRF630N IRF630NS IRF630NL
D2Pak is suitable tor high current applications because ofits
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
proWs application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 9.3
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.5 A
IDM Pulsed Drain Current C) 37
PD @Tc = 25°C Power Dissipation 82 W
Linear Derating Factor 0.5 W/°C
VGS Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy© 94 mJ
IAR Avalanche Current© 9.3 A
EAR Repetitive Avalanche Energy© 8.2 mJ
dv/dt Peak Diode Recovery dv/dt © 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© 10 Ibf-in (1.1N-m)
1
10/08/04
IRF630N/S/L
International
IEER Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient .-..-.- 0.26 -.-. V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.30 Q VGS = 10V, ID = 5.4A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250PA
grs Forward Transconductance 4.9 - - S Vros = 50V, ID = 5.4A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, VGS = 0V
- - 250 Vos = 160V, I/cs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 35 lo = 5.4A
Qgs Gate-to-Source Charge - - 6.5 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 17 VGS = 10V ©
tam) Turn-On Delay Time - 7.9 - VDD = 100V
tr Rise Time - 14 - ID = 5.4A
td(ott) Turn-Off Delay Time - 27 - ns RG = 139
tf Fall Time - 15 - Ro = 189 ©
LD Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 575 - VGS = 0V
Coss Output Capacitance - 89 - Vos = 25V
Crss Reverse Transfer Capacitance - 25 - pF f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse
(Body Diode)© - - 37 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 5.4A, VGs = 0V ©
trr Reverse Recovery Time - 117 176 ns TJ = 25°C, IF = 5.4A
Qrr Reverse Recovery Charge - 542 813 nC di/dt = 100/Vps G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 1.83
Recs Case-to-Sink, Flat, Greased Surface 69 0.50 - °C/W
ReJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
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