IRF630MFP ,N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFETAPPLICATIONS■ MONITOR DISPLAYS■ GENERAL PURPOSE SWITCH
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IRF630M-IRF630MFP
N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET
1/9October 2001
IRF630M
IRF630MFPN-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONThis power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY™ process. This technology matches and
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS MONITOR DISPLAYS GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤9A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
IRF630M / FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
IRF630M / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
IRF630M / FP
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
Thermal Impedence for TO-220
5/9
IRF630M / FP
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
