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IRF624S
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Ilhtemationall
TOR Rectifier
PD-9.1004
IRF624S
HEXFETO Power MOSFET
0 Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Vss @ 10 V 4.4
In @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 2.8 A
IDM Pulsed Drain Current Ci) 14
P0 @ Tc = 25°C Power Dissipation 50 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 0.40 W PC
Linear Derating Factor (PCB Mount)" 0.025
I/ss Gate-to-Source Voltage _+20 V
EAS Single Pulse Avalanche Energy © 100 ml
IAR Avalanche Current CO 4.4 A
EAR Repetitive Avalanche Energy C) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt G) 4.8 l V/ns
Tu, Tsrs Junction and Storage Temperature Range -55 to +150 , °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance .
Parameter Min. Typ. Max, Units
Rac Junction-to-Case - - 2.5
RNA Junction-to-Ambient (PCB mount)" - - 40 "C/W
Ham Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IéF624s
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGS=0V, ID: 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.36 - V/°C Reference to 25°C, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.1 n Ves=1OV, I022.6A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vrs=Vss, ID: 250WA
gis Forward Transconductance 1.5 - - S Vos=50V, Io=2.6A (ii)
loss Drain-to-Source Leakage Current - --. 25 WA VDs=250V, Vss=OV
- - 250 Vos=200V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Vss---20V
% Total Gate Charge - - 14 ID=4.4A
Qgs Gate-to-Source Charge -- - 2.7 nC Vos=200V
di Gate-to-Drain ("Miller") Charge - -.. 7.8 Ves=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 7.0 - VDD=125V
tr Rise Time - 13 - ns Io=4.4A
td(oti) Turn-Off Delay Time - 2O - Re=18§2
t, Fall Time - 12 - 89:28!) See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - iitvrli".sti'nd.') D
nH from package @>
Ls Internal Source Inductance - 7.5 - and center di
die contact s
Ciss Input Capacitance - 260 - Ves=0V
Coss Output Capacitance - 77 - pF V05: 25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
ls Continuous Source Current - - 4 4 MOSFET symbol D
(Body Diode) . A showing the Cf)
Iss, Pulsed Source Current - _ 14 integral reverse G (I-]
(Body Diode) (i) p-n junction diode. S
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=4.4A, VGs=0V (io
trr Reverse Recovery Time - 200 400 ns TJ=25°C, IF=4.4A
G, Reverse Recovery Charge - 0.93 1.9 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=8.3mH
RG--25n, lAs=4.4A (See Figure 12)
© IsoS4.4A, di/de90A/ws, VDDSV(BR)DSS.
TJS150°C
© Pulse width 5 300 us; duty cycle c2%.
