IRF6216 ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94297IRF6216SMPS MOSFET®HEXFET Power MOSFET
IRF6216PBF , Reset Switch for Active Clamp Reset DC-DC converters
IRF6216TR ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 0.240Ω Ω Ω Ω Ω@V =-10V ..
IRF6216TRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp ResetDC-DC converters -150V 0.240 ..
IRF6217 ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 2.4Ω Ω Ω Ω Ω@V =-10V -0 ..
IRF6217TRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 2.4@V =-10V -0.7A GSD ..
IS62LV256L-15JI , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV5128LL-70BI , 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70TI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IRF6216-IRF6216TR
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier SMPS MOSFET
Applications
o Reset Switch for Active Clamp Reset
DC-DC converters
Benefits
. Low Gate to Drain Charge to Reduce
Switching Losses
. Fully Characterized Capacitance Including
Effective Coss to Simplify Design (See
App. Note AN1001)
PD - 94297
IRF6216
HEXFET© Power MOSFET
Voss RDS(on) max ID
-150v th240Q@Vss =-10V -2.2A
0 Fully Characterized Avalanche Voltage DD
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25''C Continuous Drain Current, VGs @ 10V -2.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.9 A
IDM Pulsed Drain Current C) -19
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
Ves Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt 7.8 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
02/1 2/02
IfRF6216
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 - - V VGs = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - -O.17 - V/°C Reference to 25°C, ID = -1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.240 Q VGS = -10V, ID = -1.3A ©
VGS(1h) Gate Threshold Voltage -3.0 - -5.0 V Vos = Vss, ID = -250pA
loss Drain-to-Source Leakage Current - - -25 pA VDS = -150V, VGS = 0V
- - -250 Vros = -120V, VGs = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 2.7 - - S Vos = -50V, ID = -1.3A
Qg Total Gate Charge - 33 49 ID = -1.3A
Qgs Gate-to-Source Charge - 7.2 11 nC Vos = -120V
di Gate-to-Drain ("Miller") Charge - 15 23 VGS = -10V,
td(on) Turn-On Delay Time - 18 - VDD = -75V
tr Rise Time - 15 - ns ID = -1.3A
tam) Turn-Off Delay Time - 33 - Rs = 6.59
tr Fall Time - 26 - VGs = -10V ©
Ciss Input Capacitance - 1280 - VGS = 0V
Coss Output Capacitance - 220 - Vos = -25V
Crss Reverse Transfer Capacitance - 53 - pF f = 1.0MHz
Coss Output Capacitance - 1290 - N/ss = 0V, Vros = -1.0V, f = 1.0MHz
Cass Output Capacitance - 99 - VGs = 0V, VDs = -120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 220 - VGs = 0V, Vos = 0V to -120V
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche Current0) - -4.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -2 2 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - -19 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V To = 25°C, Is = -1.3A, VGs = 0V ©
trr Reverse Recovery Time - 80 120 nS To = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge - 310 460 nC di/dt = -100/Ups ©
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